IRHF57034

www.DataSheet4U.com PD - 93791D RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number IRHF57034 IRHF53034 IRHF54034 Radiation Level RDS(on) 100K Rads (Si) 0.048Ω 300K Rads (Si) 0.048Ω 500K Rads (Si) 0.048Ω 0.060Ω IRHF57034 JANSR2N7492T2 60V, N-CHANNEL REF: MIL-PRF-19500/701 5 TECHNOLOGY ™ ID QPL Part Number 12A* JANSR2N7492T2 12A* JANSF2N7492T2 12A* JANSG2N7492T2 12A* JANSH2N7492T2 IRHF58034 1000K Rads (Si) International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. TO-39 Features: n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermetically Sealed Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipati...