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PD - 93791D
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
Product Summary
Part Number IRHF57034 IRHF53034 IRHF54034 Radiation Level RDS(on) 100K Rads (Si) 0.048Ω 300K Rads (Si) 0.048Ω 500K Rads (Si) 0.048Ω 0.060Ω
IRHF57034 JANSR2N7492T2 60V, N-CHANNEL
REF: MIL-PRF-19500/701
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TECHNOLOGY
ID QPL Part Number 12A* JANSR2N7492T2 12A* JANSF2N7492T2 12A* JANSG2N7492T2 12A* JANSH2N7492T2
IRHF58034 1000K Rads (Si)
International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
TO-39
Features:
n n n n n n n n
Single Event Effect (SEE) Hardened Ultra Low RDS(on) Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermetically Sealed
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Lead Temperature Weight * Current is limited by package For footnotes refer to the last page 12* 9.5 48 25 0.2 ±20 270 12 2.5 9.6 -55 to 150
Pre-Irradiation
Units A
W
W/°C
V mJ A mJ V/ns
o
C
300 ( 0.063 in./1.6mm from case for 10s) 0.98 (Typical)
g
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04/27/06
IRHF57034, JANSR2N7492T2
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage ∆BVDSS/∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
60 — — 2.0 12 — — — — — — — — — — — —
Typ Max Units
— 0.062 — — — — — — — — — — — — — — 7.0 — — 0.048 4.0 — 10 25 100 -100 40 10 15 25 100 35 30 — V V/°C Ω V S( ) µA
Ω
Test Conditions
VGS = 0V, I D = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 9.5A Ã VDS = VGS, ID = 1.0mA VDS >= 15V, IDS = 9.5A Ã VDS= 48V ,VGS=0V VDS = 48V, V GS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, I D = 12A VDS = 30V VDD = 30V, ID = 12A VGS =12V, RG = 7.5Ω
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA
nC
ns
nH Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
— — —
1160 530 18
— — —
pF
VGS = 0V, VDS = 25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
— — — — — — — — — — 12* 48 1.5 100 300
Test Conditions
A
V ns nC Tj = 25°C, IS = 12A, VGS = 0V Ã Tj = 25°C, IF = 12A, di/dt ≤100A/µs VDD ≤ 25V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC RthJA Junction-to-Case Junction-to-Ambient
Min Typ Max
— — — — 5.0 175
Units
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier web site. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHF57034, JANSR2N7492T2
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Fo.