BSS129

www.DataSheet4U.com ND2406L/2410L, BSS129 N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number ND2406L ND2410L BSS129 230 V(BR)DSV Min (V) 240 rDS(on) Max (W) 6 10 20 VGS(off) (V) –1.5 to –4.5 –0.5 to –2.5 –0.7 (min) ID (A) 0.23 0.18 0.15 Features D D D D D High Breakdown Voltage: 260 V Normally “On” Low rDS Switch: 3.5 W Low Input and Output Leakage Low-Power Drive Requirement Low Input Capacitance TO-226AA (TO-92) 1 Benefits D D D D D Full-Voltage Operation Low Offset Voltage Low Error Voltage Easily Driven Without Buffer High-Speed Switching Applications D D D D D Normally “On” Switching Circuits Current Sources/Limiters Power Supply, Converter Circuits Solid-State Relays Telecom Switches TO-92-18CD (TO-18 Lead Form) 1 S S G 2 D 2 D 3 Top View ND2406L ND2410L G 3 Top View BSS129 Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta TA= 25_C TA= 100_C TA= 25_C TA= 100_C Symbol VDS VGS ID IDM PD RthJA TJ, Tstg ND2406L 240 "30 0.23 0.14 0.9 0.8 0.32 156 ND2410L 240 "30 0.18 0.12 0.9 0.8 0.32 156 –55 to 150 BSS129 230 "20 0.15 Unit V A 0.6 1.0 0.4 125 W _C/W _C Power Dissipation Maximum Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600...