Power Detector. LMV227 Datasheet

LMV227 Detector. Datasheet pdf. Equivalent

LMV227 Datasheet
Recommendation LMV227 Datasheet
Part LMV227
Description RF Power Detector
Feature LMV227; www.DataSheet4U.com LMV227 Production RF Tested, RF Power Detector for CDMA and WCDMA July 2006 L.
Manufacture National Semiconductor
Datasheet
Download LMV227 Datasheet




National Semiconductor LMV227
www.DataSheet4U.com
July 2006
LMV227
Production RF Tested, RF Power Detector for CDMA and
WCDMA
General Description
The LMV227 is a 30 dB RF power detector intended for use
in CDMA and WCDMA applications. The device has an RF
frequency range from 450 MHz to 2 GHz. It provides an
accurate temperature and supply compensated output volt-
age that relates linearly to the RF input power in dBm. The
circuit operates with a single supply from 2.7V to 5V. The
LMV227 has an integrated filter for low-ripple average power
detection of CDMA signals with 30 dB dynamic range. Addi-
tional filtering can be applied using a single external capaci-
tor.
The LMV227 has an RF power detection range from -30
dBm to 0 dBm and is ideally suited for direct use in combi-
nation with resistive taps. The device is active for Enable =
HI, otherwise it goes into a low power consumption shut-
down mode. During shutdown the output will be LOW. The
output voltage ranges from 0.2V to 2V and can be scaled
down to meet ADC input range requirements. The output
signal bandwidth can optionally be lowered externally as
well.
Features
n 30 dB linear in dB power detection range
n Output voltage range 0.2 to 2V
n Logic low shutdown
n Multi-band operation from 450 MHz to 2000 MHz
n Accurate temperature compensation
Applications
n CDMA RF power control
n WCDMA RF power control
n CDMA2000 RF power control
n PA modules
Typical Application
© 2006 National Semiconductor Corporation DS201181
20118101
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National Semiconductor LMV227
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage
VDD - GND
ESD Tolerance (Note 2)
Human Body Model
Machine Model
6.0V Max
2000V
200V
Storage Temperature Range
Junction Temperature (Note 3)
Mounting Temperature
Infrared or convection (20 sec)
−65˚C to 150˚C
150˚C Max
235˚C
Operating Ratings (Note 1)
Supply Voltage
Temperature Range
2.7V to 5.5V
−40˚C to +85˚C
2.7 DC and AC Electrical Characteristics
Unless otherwise specified, all limits are guaranteed to VDD = 2.7V; TJ = 25˚C. Boldface limits apply at temperature extremes.
(Note 4)
Symbol
Parameter
Condition
Min
Typ
Max
Units
IDD Supply Current
Active mode: RFIN/EN = VDD (DC), No
RF Input Power Present.
4.9 7 mA
8
Shutdown: RFIN/EN = GND (DC), No
RF Input Power Present.
0.6 4.5 µA
VLOW
EN Logic Low Input Level
(Note 6)
0.8 V
VHIGH
EN Logic High Input Level
(Note 6)
1.8 V
ton Turn-on- Time
No RF Input Power Present
tr Rise Time (Note 7)
Step from No Power to 0 dBm Applied
IEN Current into RFIN/EN Pin
PIN Input Power Range (Note 5)
2.1 µs
4.5 µs
1 µA
0 dBm
-30
-43 dBV
-13
Logarithmic Slope (Note 8)
900 MHz
43.3
1800 MHz
43.9
1855 MHz
36 43.5 51 mV/dB
1900 MHz
44.0
2000 MHz
43.2
Logarithmic Intercept (Note 8) 900 MHz
−46.7
1800 MHz
−44.1
1855 MHz
−56 −44.3 −33 dBm
1900 MHz
−42.8
2000 MHz
−43.7
VOUT
ROUT
Output Voltage
Output Impedance
No RF Input Power Present
No RF Input Power Present
208 350 mV
20.3 29
k
34
en Output Referred Noise
RF Input = 1800 MHz, −10 dBm,
Measured at 10 kHz
700 nV/
Variation over Temperature
900 MHz, RFIN = 0 dBm Referred to
25˚C
+0.64
−1.07
1800 MHz, RFIN = 0 dBm Referred to
25˚C
1900 MHz, RFIN = 0 dBm Referred to
25˚C
+0.09
−0.86
+0
−0.69
dB
2000 MHz, RFIN = 0 dBm Referred to
25˚C
+0
−0.86
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National Semiconductor LMV227
5.0 DC and AC Electrical Characteristics
Unless otherwise specified, all limits are guaranteed to VDD = 5.0V; TJ = 25˚C. Boldface limits apply at temperature extremes.
(Note 4)
Symbol
Parameter
Condition
Min
Typ
Max
Units
IDD Supply Current
Active Mode: RFIN/EN = VDD (DC), No
RF Input Power Present.
5.3 7 mA
9
Shutdown: RFIN/EN = GND (DC), No
RF Input Power Present.
0.49
4.5
µA
VLOW
EN Logic Low Input Level
(Note 6)
0.8 V
VHIGH
EN Logic High Input Level
(Note 6)
1.8 V
ton
tr
IEN
PIN, MIN
Turn-on- Time
Rise Time (Note 7)
Current Into RFIN/EN Pin
Input Power Range (Note 5)
No RF Input Power Present
Step from No Power to 0 dBm Applied
2.1 µs
4.5 µs
1 µA
-30 dBm
0
-43 dBV
-13
Logarithmic Slope (Note 8)
900 MHz
43.6
1800 MHz
1900 MHz
44.5
44.5
mV/dB
2000 MHz
43.7
Logarithmic Intercept (Note 8) 900 MHz
-48.1
1800 MHz
1900 MHz
-45.6
-44.2
dBm
2000 MHz
-45.6
VOUT
ROUT
Output Voltage
Output Impedance
No RF Input Power Present
No RF Input Power Present
211 400 mV
23.4 29
k
31
en Output Referred Noise
RF Input = 1800 MHz, −10 dBm,
Measured at 10 kHz
700 nV/
Variation over Temperature
900 MHz, RFIN = 0 dBm Referred to
25˚C
+0.89
−1.16
1800 MHz, RFIN = 0 dBm Referred to
25˚C
1900 MHz, RFIN = 0 dBm Referred to
25˚C
+0.3
−0.82
+0.34
−0.63
dB
2000 MHz RFIN = 0 dBm Referred to
25˚C
+0.22
−0.75
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics.
Note 2: Human body model: 1.5 kin series with 100 pF. Machine model, 0in series with 100 pF.
Note 3: The maximum power dissipation is a function of TJ(MAX) , θJA and TA. The maximum allowable power dissipation at any ambient temperature is PD =
(TJ(MAX) - TA)/θJA. All numbers apply for packages soldered directly into a PC board
Note 4: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of
the device such that TJ = TA. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ > TA.
Note 5: Power in dBV = dBm −13 when the impedance is 50.
Note 6: All limits are guaranteed by design or statistical analysis
Note 7: Typical values represent the most likely parametric norm.
Note 8: Device is set in active mode with a 10 kresistor from VDD to RFIN/EN. RF signal is applied using a 50RF signal generator AC coupled to the RFIN/EN
pin using a 100 pF coupling capacitor.
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