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BLF6G20-180P Dataheets PDF



Part Number BLF6G20-180P
Manufacturers NXP
Logo NXP
Description UHF power LDMOS transistor
Datasheet BLF6G20-180P DatasheetBLF6G20-180P Datasheet (PDF)

www.DataSheet4U.com BLF6G20-180P UHF power LDMOS transistor Rev. 01 — 19 April 2006 Objective data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 1805 to 1880 VDS (V) 32 PL(AV) (W) 50 Gp (dB) 17.5 ηD (%) 27.5 ACPR (dBc) −35[1] T.

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www.DataSheet4U.com BLF6G20-180P UHF power LDMOS transistor Rev. 01 — 19 April 2006 Objective data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 1805 to 1880 VDS (V) 32 PL(AV) (W) 50 Gp (dB) 17.5 ηD (%) 27.5 ACPR (dBc) −35[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz, a supply voltage of 32 V and an IDq of 1600 mA: N Average output power = 50 W N Power gain = 17.5 dB (typ) N Efficiency = 27.5 % N ACPR = −35 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (1800 MHz to 2000 MHz) I Internally matched for ease of use 1.3 Applications I RF power amplifiers for W-CDMA base stations and multi carrier applications in the 1800 MHz to 2000 MHz frequency range. www.DataSheet4U.com Philips Semiconductors BLF6G20-180P UHF power LDMOS transistor 2. Pinning information Table 2: Pin 1 2 3 4 5 [1] Pinning Description drain1 drain2 gate1 gate2 source [1] Simplified outline 1 2 5 3 4 Symbol Connected to flange 3. Ordering information Table 3: Ordering information Package Name BLF6G20-180P Description flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads Version SOT539A Type number 4. Limiting values Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min −0.5 −65 Max 65 +13 +150 225 Unit V V A °C °C BLF6G20-180P_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Objective data sheet Rev. 01 — 19 April 2006 2 of 8 www.DataSheet4U.com Philips Semiconductors BLF6G20-180P UHF power LDMOS transistor 5. Thermal characteristics Table 5: Symbol Rth(j-case) Thermal characteristics Parameter thermal resistance from junction to case Conditions Tcase = 80 °C; PL(AV) = 50 W Typ 0.45 Unit K/W 6. Characteristics Table 6: Characteristics Tj = 25 °C per section; unless otherwise specified Symbol Parameter V(BR)DSS drain-source breakdown voltage VGS(th) VGSq IDSS IDSX IGSS gfs RDS(on) Crs gate-source threshold voltage gate-source quiescent voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance feedback capacitance Conditions VGS = 0 V; ID = 0.5 mA VDS = 10 V; ID = 144 mA VDS = 28 V; ID = 950 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 8.5 V; VDS = 0 V VDS = 10 V; ID = 7.2 A VGS = VGS(th) + 3.75 V; ID = 5 A VGS = 0 V; VDS = 28 V; f = 1 MHz Min 65 Typ Max Unit V 1.6 2 26 13 0.1 V V 5 450 µA A nA S Ω pF - 7. Application information Table 7: Application information Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1 to 64 PDPCH; f1 = 1802.5 MHz; f2 = 1807.5 MHz; f3 = 1872.5 MHz; f4 = 1877.5 MHz; RF performance at VDS = 32 V; IDq = 1600 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit Symbol PL(AV) Gp ηD ACPR Parameter average output power power gain drain efficiency adjacent channel power ratio PL(AV) = 50 W PL(AV) = 50 W PL(AV) = 50 W Conditions Min Typ 50 Max Unit W dB % dBc 17.5 27.5 −35 7.1 Ruggedness in class-AB operation The BLF6G20-180P is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 1600 mA; PL = 180 W (CW); f = 1880 MHz. BLF6G20-180P_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Objective data sheet Rev. 01 — 19 April 2006 3 of 8 www.DataSheet4U.com Philips Semiconductors BLF6G20-180P UHF power LDMOS transistor 8. Package outline Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A D A F D1 U1 q H1 C B w2 M C M c 1 2 H U2 p E1 w1 M A M B M E 5 L A 3 b e 4 w3 M Q 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A b c D D1 e E E1 9.53 9.27 F H H1 L p 3.30 3.05 Q 2.31 2.01 q 35.56 U1 U2 w1 w2 0.51 w3 0.25 9.50 5.33 11.81 0.15 31.55 31.52 13.72 9.30 3.96 11.56 0.08 30.94 30.96 1.75 17.12 25.53 3.73 1.50 16.10 25.27 2.72 41.28 10.29 0.25 41.02 10.03 0.374 0.375 0.069 0.674 1.005 0.147 0.130 0.091 0.210 0.465 0.006 1.242 1.241 1.625 0.405 1.400 0.010 0.020 0.010 0.540 0.36.


PE9763 BLF6G20-180P BLC6G10-200


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