BLC6G10-200 transistor Datasheet

BLC6G10-200 Datasheet, PDF, Equivalent


Part Number

BLC6G10-200

Description

UHF power LDMOS transistor

Manufacture

NXP

Total Page 9 Pages
Datasheet
Download BLC6G10-200 Datasheet


BLC6G10-200
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BLC6G10-200; BLC6G10LS-200
UHF power LDMOS transistor
Rev. 01 — 19 April 2006
Objective data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for base station applications at frequencies from
800 MHz to 1000 MHz.
Table 1: Typical performance
Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.
Mode of operation
f
VDS
PL(AV)
Gp
ηD
(MHz)
(V) (W)
(dB) (%)
2-carrier W-CDMA
869 to 894
28 40
20 27
ACPR
(dBc)
39[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 5 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a
supply voltage of 28 V and an IDq of 1400 mA:
N Average output power = 40 W
N Power gain = 20 dB
N Efficiency = 27 %
N ACPR = 39 dBc
I Easy power control
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (800 MHz to 1000 MHz)
I Internally matched for ease of use
1.3 Applications
I RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and
multi carrier applications in the 800 MHz to 1000 MHz frequency range.

BLC6G10-200
www.DataSheet4U.com
Philips Semiconductors
BLC6G10-200; BLC6G10LS-200
UHF power LDMOS transistor
2. Pinning information
Table 2: Pinning
Pin Description
BLC6G10-200 (SOT895-1)
1 drain
2 gate
3 source
BLC6G10LS-200 (SOT896-1)
1 drain
2 gate
3 source
[1] Connected to flange
3. Ordering information
Simplified outline Symbol
11
3
[1]
22
3
sym112
1
3
[1]
2
1
2
3
sym112
Table 3: Ordering information
Type number Package
Name Description
Version
BLC6G10-200 -
plastic flanged cavity package; 2 mounting slots; 2 leads SOT895-1
BLC6G10LS-200 -
plastic earless flanged cavity package; 2 leads
SOT896-1
4. Limiting values
Table 4: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Tstg storage temperature
Tj junction temperature
Min Max Unit
- 65 V
0.5 +13 V
- <tbd> A
65 +150 °C
- 200 °C
BLC6G10-200_6G10LS-200_1
Objective data sheet
Rev. 01 — 19 April 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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Features www.DataSheet4U.com BLC6G10-200; BLC6G1 0LS-200 UHF power LDMOS transistor Rev. 01 — 19 April 2006 Objective data sh eet 1. Product profile 1.1 General de scription 200 W LDMOS power transistor for base station applications at freque ncies from 800 MHz to 1000 MHz. Table 1 : Typical performance Typical RF perfor mance at Tcase = 25 °C in a class-AB p roduction test circuit. Mode of operati on 2-carrier W-CDMA [1] f (MHz) 869 to 894 VDS (V) 28 PL(AV) (W) 40 Gp (dB ) 20 ηD (%) 27 ACPR (dBc) −39[1] Test signal: 3GPP; test model 1; 64 DPC H; PAR = 7.5 dB at 0.01 % probability o n CCDF per carrier; carrier spacing 5 M Hz. CAUTION This device is sensitive t o ElectroStatic Discharge (ESD). Theref ore care should be taken during transpo rt and handling. 1.2 Features I Typica l 2-carrier W-CDMA performance at frequ encies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 mA: N Average output power = 40 W N Power gain = 20 dB N Efficiency = 27 % N ACPR = −39 dBc I Easy power control I.
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