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BLC6G10LS-200 Dataheets PDF



Part Number BLC6G10LS-200
Manufacturers NXP
Logo NXP
Description UHF power LDMOS transistor
Datasheet BLC6G10LS-200 DatasheetBLC6G10LS-200 Datasheet (PDF)

www.DataSheet4U.com BLC6G10-200; BLC6G10LS-200 UHF power LDMOS transistor Rev. 01 — 19 April 2006 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 869 to 894 VDS (V) 28 PL(AV) (W) 40 Gp (dB) 20 ηD (%) 27 ACPR (dBc) −39[1] .

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www.DataSheet4U.com BLC6G10-200; BLC6G10LS-200 UHF power LDMOS transistor Rev. 01 — 19 April 2006 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 869 to 894 VDS (V) 28 PL(AV) (W) 40 Gp (dB) 20 ηD (%) 27 ACPR (dBc) −39[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 mA: N Average output power = 40 W N Power gain = 20 dB N Efficiency = 27 % N ACPR = −39 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (800 MHz to 1000 MHz) I Internally matched for ease of use 1.3 Applications I RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 800 MHz to 1000 MHz frequency range. www.DataSheet4U.com Philips Semiconductors BLC6G10-200; BLC6G10LS-200 UHF power LDMOS transistor 2. Pinning information Table 2: Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline Symbol BLC6G10-200 (SOT895-1) 1 3 2 2 3 sym112 1 BLC6G10LS-200 (SOT896-1) 1 2 3 drain gate source [1] 1 3 2 2 1 3 sym112 [1] Connected to flange 3. Ordering information Table 3: Ordering information Package Name BLC6G10-200 BLC6G10LS-200 Description plastic flanged cavity package; 2 mounting slots; 2 leads plastic earless flanged cavity package; 2 leads Version SOT895-1 SOT896-1 Type number 4. Limiting values Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min −0.5 −65 Max 65 +13 +150 200 Unit V V A °C °C BLC6G10-200_6G10LS-200_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Objective data sheet Rev. 01 — 19 April 2006 2 of 9 www.DataSheet4U.com Philips Semiconductors BLC6G10-200; BLC6G10LS-200 UHF power LDMOS transistor 5. Thermal characteristics Table 5: Symbol Thermal characteristics Parameter Conditions Type Min Typ Max 0.52 Unit K/W K/W 0.43 Tcase = 80 °C; BLC6G10-200 Rth(j-case) thermal resistance from junction to case PL = 40 W BLC6G10LS-200 6. Characteristics Table 6: Characteristics Tj = 25 °C unless otherwise specified Symbol Parameter V(BR)DSS drain-source breakdown voltage VGS(th) VGSq IDSS IDSX IGSS gfs RDS(on) Crs gate-source threshold voltage gate-source quiescent voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance feedback capacitance Conditions VGS = 0 V; ID = 0.5 mA VDS = 10 V; ID = 150 mA VDS = 28 V; ID = 950 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 13 V; VDS = 0 V VDS = 10 V; ID = 7.5 A VGS = VGS(th) + 3.75 V; ID = 5.25 A VGS = 0 V; VDS = 28 V; f = 1 MHz Min 65 Typ Max Unit V 2 40 45 - V 5 450 µA A nA S Ω pF V - 7. Application information Table 7: Application information Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1-64 PDPCH; f1 = 871.5 MHz; f2 = 876.5 MHz; f3 = 886.5 MHz; f4 = 891.5 MHz; RF performance at VDS = 28 V; IDq = 1400 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit Symbol PL(AV) Gp IRL ηD ACPR Parameter average output power power gain input return loss drain efficiency adjacent channel power ratio PL(AV) = 40 W PL(AV) = 40 W PL(AV) = 40 W PL(AV) = 40 W Conditions Min 18.5 25 Typ 40 20 −6.5 27 −39 Max 21.5 −4.5 −36 Unit W dB dB % dBc 7.1 Ruggedness in class-AB operation The BLC6G10-200 and BLC6G10LS-200 are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: VDS = 28 V; IDq = 1400 mA; PL = ; f = 894 MHz. BLC6G10-200_6G10LS-200_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Objective data sheet Rev. 01 — 19 April 2006 3 of 9 www.DataSheet4U.com Philips Semiconductors BLC6G10-200; BLC6G10LS-200 UHF power LDMOS transistor 8. Package outline Plastic flanged cavity package; 2 mounting slots; 2 leads SOT895-1 D F A D1 U1 q B C c 1 L w1 M A M B M H U2 3 p E1 E A 2 b w2 M C M Q 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm inches A 4.1 3.3 b 12.83 12.57 c 0.17 0.14 D 19.9 19.7 D1 20.42 20.12 E 9.53 9.27 E1 9.78 9.53 .


BLC6G10-200 BLC6G10LS-200 BLF369


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