BLF369

www.DataSheet4U.com BLF369 VHF power LDMOS transistor Rev. 01 — 13 April 2006 Objective data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF Power transistor for broadcast transmitter applications and industrial applications in the HF/VHF band. Table 1: Typical performance Typical RF performance at VDS = 32 V and Th = 25 °C in a common-source 225 MHz test circuit.[1] Mode of operation CW, class AB 2-tone, class AB [1] f (MHz) 225 f1 = 225; f2 = 225.1 PL (W) 500 - PL(PEP) (W) 500 Gp (dB) 18 19 ηD (%) 60 47 IMD3 (dBc) −28 Th is the heatsink temperature. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Typical CW performance at 225 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 1.0 A: N Load power PL = 500 W N Gain Gp ≥ 18 dB N Drain efficiency ηD = 60 % I Advanced flange material for optimum thermal behavior and reliability I Excellent ruggedness I High power gain I Designed for broadband operation (HF/VHF band) I Source on underside eliminates DC isolators, reducing common-mode inductance I Easy power control 1.3 Applications I Communication transmitter applications in the UHF band I Industrial applications in the UHF band www.DataSheet4U.com Philips Semiconductors BLF369 VHF power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 Pinning Description gate1 gate2 drain1 drain2 source [1] Simplified outline 1 ...