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IGBT. 1MBI400S-120 Datasheet

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IGBT. 1MBI400S-120 Datasheet






1MBI400S-120 IGBT. Datasheet pdf. Equivalent




1MBI400S-120 IGBT. Datasheet pdf. Equivalent





Part

1MBI400S-120

Description

IGBT



Feature


www.DataSheet4U.com 1MBI400S-120 1200V / 400A 1 in one-package Features · Hig h speed switching · Voltage drive · L ow inductance module structure IGBT Mo dule Applications · Inverter for Moto r drive · AC and DC Servo drive amplif ier · Uninterruptible power supply · Industrial machines, such as Welding ma chines Maximum ratings and characteris tics Absolute maximum rat.
Manufacture

Fuji Electric

Datasheet
Download 1MBI400S-120 Datasheet


Fuji Electric 1MBI400S-120

1MBI400S-120; ings (at Tc=25°C unless otherwise speci fied) Unit Symbol Rating V VCES 1200 V VGES ±20 A Tc=25°C IC 600 A Tc=80°C 400 A Tc=25°C IC pulse 1200 A Tc=80°C 800 A -IC 400 A 1ms -IC pulse 800 W Ma x. power dissipation PC 3100 °C Operat ing temperature Tj +150 °C Storage tem perature Tstg -40 to +125 Isolation vol tage *1 V is AC 2500 (1min.) V N·m Scr ew torque Mounting *2 3.5 N.


Fuji Electric 1MBI400S-120

·m Terminals *2 4.5 N·m Terminals *2 1 .7 *1 : Aii terminals should be connect ed together when isolation test will be done *2 : Recommendable value : Mounti ng 2.5 to 3.5 N·m(M5 or M6) Terminal 3 .5 to 4.5 N·m(M6), 1.3 to 1.7N·m(M4) Item Collector-Emitter voltage Gate-Emi tter voltaga Collector Continuous curre nt 1ms Equivalent Circuit Schematic C E G E Electrical cha.


Fuji Electric 1MBI400S-120

racteristics (at Tj=25°C unless otherwi se specified) Item Zero gate voltage co llector current Gate-Emitter leakage cu rrent Gate-Emitter threshold voltage Co llector-Emitter saturation voltage Inpu t capacitance Output capacitance Revers e transfer capacitance Turn-on time Sym bol ICES IGES VGE(th) VCE(sat) Cies Coe s Cres ton tr tr(i) toff tf VF trr Char acteristics Min. Ty.

Part

1MBI400S-120

Description

IGBT



Feature


www.DataSheet4U.com 1MBI400S-120 1200V / 400A 1 in one-package Features · Hig h speed switching · Voltage drive · L ow inductance module structure IGBT Mo dule Applications · Inverter for Moto r drive · AC and DC Servo drive amplif ier · Uninterruptible power supply · Industrial machines, such as Welding ma chines Maximum ratings and characteris tics Absolute maximum rat.
Manufacture

Fuji Electric

Datasheet
Download 1MBI400S-120 Datasheet




 1MBI400S-120
www.DataSheet4U.com
1MBI400S-120
IGBT Module
1200V / 400A 1 in one-package
Features
· High speed switching
· Voltage drive
· Low inductance module structure
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item
Symbol
Rating
Unit
Collector-Emitter voltage
VCES
1200
V
Gate-Emitter voltaga
VGES
±20 V
Collector Continuous
current
Tc=25°C IC
Tc=80°C
600 A
400 A
Equivalent Circuit Schematic
1ms Tc=25°C IC pulse
1200
A
Tc=80°C
-IC
800 A
400 A
C
E
1ms
-IC pulse
800 A
Max. power dissipation
PC
3100
W
Operating temperature
Tj
+150
°C
Storage temperature
Tstg
-40 to +125
°C
Isolation voltage *1
Vis AC 2500 (1min.) V
Screw torque
Mounting *2 3.5 N·m
GE
Terminals *2 4.5 N·m
Terminals *2 1.7 N·m
*1 : Aii terminals should be connected together when isolation test will be done
*2 : Recommendable value : Mounting 2.5 to 3.5 N·m(M5 or M6)
Terminal 3.5 to 4.5 N·m(M6), 1.3 to 1.7N·m(M4)
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Symbol
Characteristics
Conditions
Unit
Min.
Typ.
Max.
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
ICES
IGES
VGE(th)
VCE(sat)
– – 4.0 VGE=0V, VCE=1200V
mA
– – 0.8 VCE=0V, VGE=±20V
µA
5.5
7.2 8.5
VCE=20V, IC=400mA
V
2.3 2.6
Tc=25° C VGE=15V, IC=400A V
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Cies
Coes
Cres
ton
– 2.8 –
– 48000
– 10000
– 8800 –
– 0.35 1.2
Tc=125°C
VGE=0V
VCE=10V
f=1MHz
VCC=600V
pF
µs
tr
0.25 0.6
IC=400A
Turn-off time
tr(i)
0.1 –
VGE=±15V
toff
0.45 1.0
RG=1.8 ohm
Forward on voltage
tf – 0.08 0.3
VF
2.7 3.5
Tj=25°C
IF=400A, VGE=0V V
2.4 –
Tj=125°C
Reverse recovery time trr – – 0.35 IF=400A
µs
Thermal resistance characteristics
Item
Symbol
Characteristics
Conditions
Thermal resistance
Rth(j-c)
Rth(j-c)
Rth(c-f)*4
Min.
Typ.
Max.
– 0.04
– 0.12
0.0125 –
IGBT
FWD
the base to cooling fin
*4 : This is the value which is defined mounting on the additional cooling fin with thermal compound
Unit
°C/W
°C/W
°C/W




 1MBI400S-120
1MBI400S-120
Characteristics
1000
Collector current vs. Collector-Emiiter voltage
Tj= 25°C (typ.)
VGE= 20V 15V 12V
800
600
10V
400
200
0
0
1234
Collector - Emitter voltage : VCE [ V ]
8V
5
1000
800
Collector current vs. Collector-Emiiter voltage
VGE=15V (typ.)
Tj= 25°C Tj= 125°C
600
400
200
0
012345
Collector - Emitter voltage : VCE [ V ]
100000
Capacitance vs. Collector-Emiiter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
Cies
10000
5000
Coes
Cres
1000
0
5 10 15 20 25 30
Collector - Emitter voltage : VCE [ V ]
35
IGBT Module
1000
800
Collector current vs. Collector-Emiiter voltage
Tj= 125°C (typ.)
VGE= 20V 15V 12V
600
10V
400
200
0
0
8V
1234
Collector - Emitter voltage : VCE [ V ]
5
Collector-Emiiter voltage vs. Gate-Emitter voltage
Tj= 25°C (typ.)
10
8
6
4
2
0
5
1000
Ic= 800A
Ic= 400A
Ic=200A
10 15 20
Gate - Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=400A, Tj= 25°C
25
25
800 20
600 15
400 10
200 5
00
0
1000
2000
3000
4000
Gate charge : Qg [ nC ]




 1MBI400S-120
1MBI400S-120
IGBT Module
1000
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=+-15V, Rg= 1.8ohm, Tj= 25°C
500 toff
1000
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=+-15V, Rg= 1.8ohm, Tj= 125°C
toff
500
ton
tr
100
tf
50
0 100 200 300 400 500 600 700
Collector current : Ic [ A ]
5000
1000
500
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=400A, VGE=+-15V, Tj= 25°C
ton
toff
tr
100 tf
50
0.5
1 10
Gate resistance : Rg [ ohm ]
50
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=400A, VGE=+-15V, Tj= 125°C
300
Eon
200
100
Eoff
0
0.5 1
Err
10 50
Gate resistance : Rg [ ohm ]
ton
tr
tf
100
50
0 100 200 300 400 500 600 700
Collector current : Ic [ A ]
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=+-15V, Rg=1.8ohm
100
Eon(125°C)
80
Eon(25°C)
60
Eoff(125°C)
40
Eoff(25°C)
Err(125°C)
20
Err(25°C)
0
0 200 400 600 800
Collector current : Ic [ A ]
Reverse bias safe operating area
+VGE=15V, -VGE<=15V, Rg>=1.8ohm, Tj<=125°C
900
800
700
600
500
400
300
200
100
0
0 200 400 600 800 1000 1200 1400
Collector - Emitter voltage : VCE [ V ]






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