(HN29WB800 / HN29WT800) CMOS Flash Memory
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HN29WT800 Series HN29WB800 Series
1048576-word × 8-bit / 524288-word × 16-bit CMOS Flash Memory
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Description
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HN29WT800 Series HN29WB800 Series
1048576-word × 8-bit / 524288-word × 16-bit CMOS Flash Memory
ADE-203-537A(Z) Rev. 1.0 May. 9, 1997 Description
The Hitachi HN29WT800 Series, HN29WB800 Series are 1-Mword × 8-bit/512-kword × 16-bit CMOS Flash Memory with DINOR (DIvided bitline NOR) type memory cells, that realize programming and erase capabilities with a single 3.3 V power supply. The built-in Sequence Controller allows Automatic Program/Erase without complex external control. HN29WT800 Series, HN29WB800 Series enable the low power and high performance systems such as mobile, personal computing and communication products.
Features
On-board single power supply (VCC): VCC = 3.3 V ± 0.3 V Access time: 80/100/120 ns (max) Low power dissipation: ICC = 30 mA (max) (Read) ICC = 200 µA (max) (Standby) ICC = 40 mA (max) (Program) ICC = 40 mA (max) (Erase) ICC = 1 µA (typ) (Deep powerdown) Automatic page programming: Programming time: 25 ms (typ) Program unit: 128 word Automatic erase: Erase time: 50 ms (typ) Erase unit: Boot block; 8-kword/16-kbyte × 1 Parameter block; 4-kword/8-kbyte × 2 Main block; 16-kword/32-kbyte × 1 32-kword/64-kbyte × 15 This product is compatible with M5M29FB/T800xx by Ltd. Mitsubishi.
HN29WT800 Series, HN29WB800 Series
Block boot: HN29WT800 Series: Top boot HN29WB800 Series: Bottom boot Program/Erase endurance 10,000 cycles Other functions: Software command control Selective block lock Prog...
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