2SK3592-01S

www.DataSheet4U.com 2SK3592-01L,S,SJ FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters See to P4 Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Ratings Unit V 150 V 120 A Continuous drain current ±57 A Pulsed drain current ±228 V Gate-source voltage ±30 A Non-repetitive Avalanche current 57 mJ Maximum Avalanche Energy 272.5 kV/µs Maximum Drain-Source dV/dt 20 Peak Diode Recovery dV/dt 5 kV/µs Max. power dissipation 1.67 W 270 Operating and storage Tch +150 °C -55 to +150 temperature range Tstg °C *1 L=123µH, Vcc=48V, See to Avalanche Energy Graph *2 Tch < =150°C *3 IF< *4 VDS < = BVDSS, Tch < = 150°C = -ID, -di/dt=50A/µs, Vcc < = 150V *5 VGS=-30V Item Drain-source voltage Symbol V DS VDSX *5 ID ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charg...