2SK3593-01

www.DataSheet4U.com 2SK3593-01 FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Unit V 150 V *5 120 A Continuous drain current ±57 A ±5.4 ** A Pulsed drain current ID(puls] ±228 V Gate-source voltage VGS ±30 A Non-repetitive Avalanche current IAS *2 57 mJ Maximum Avalanche Energy EAS *1 272.5 kV/µs Maximum Drain-Source dV/dt dVDS/dt *4 20 kV/µs Peak Diode Recovery dV/dt dV/dt *3 5 W Max. power dissipation PD Ta=25°C 2.4 ** Tc=25°C 270 °C Operating and storage Tch +150 -55 to +150 °C temperature range Tstg ** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2) Ta=25°C *1 L=123µH, Vcc=48V, See to Avalanche Energy Graph *2 Tch < =150°C *3 IF< *4 VDS < *5 VGS=-30V = BVDSS, Tch < = 150°C = -ID, -di/dt=50A/µs, Vcc < = 150V Drain-source voltage V DS VDSX ID Item Symbol Ratings Foot Print Pattern Equivalent circuit schematic D : Drain G : Gate S1 : Source S2 : Source Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output...