2SK3600-01L

www.DataSheet4U.com 2SK3600-01L,S,SJ FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol V DS VDSX *5 ID ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C Tch Tstg Ratings 100 70 ±29 ±116 ±30 29 155.8 20 5 1.67 105 +150 -55 to +150 Unit V V A A V A mJ kV/µs kV/µs W °C °C *2 Tch < =150°C *5 VGS=-30V Equivalent circuit schematic Drain(D) Gate(G) Source(S) *1 L=222µH, Vcc=48V, Tch=25°C, See to Avalanche Energy Graph *3 IF< = BVDSS, Tch < = 150°C *4 VDS < = -ID, -di/dt=50A/µs, Vcc < = 100V Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Outpu...