2SK3613-01

www.DataSheet4U.com 2SK3613-01 FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET FUJI POWER MOS FET Outline Drawings Drawings (mm) (mm) O Š }@–¡`Œ OUT VIEW Fig.1 o ‚Q Ž}‹ î– Æ MARKING \ Ž ¦ “ à — e Æ Fig.1 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters o ‚ }‹Žî– DIMENSIONS ARE IN MILLIMETERS. MARKING Trademark Note:1. Dimension shown in ( ) is reference values. j ’ P ‚ .iQ jÍŽ‚@ –¡à“ l l’B é‚· Æ Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Ratings Unit 250 V 220 V Continuous drain current ±14 A ±2.2 ** A Pulsed drain current ID(puls] ±56 A Gate-source voltage VGS ±30 V Non-repetitive Avalanche current IAS *2 14 A Maximum Avalanche Energy EAS *1 129.1 mJ Maximum Drain-Source dV/dt dVDS/dt *4 20 kV/µs Peak Diode Recovery dV/dt dV/dt *3 5 kV/µs Max. power dissipation PD Tc=25°C 105 W Ta=25°C 2.4 ** +150 Operating and storage Tch °C -55 to +150 temperature range Tstg °C ** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2) *1 L=1.11mH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph *2 Tch < =150°C *3 IF < = BVDSS, Tch < = 150°C *4 VDS < = -ID, -di/dt=50A/µs, Vcc < = 250V *5 VGS=-30V Item Drain-source voltage Symbol V DS VDSX *5 ID Tc=25°C Ta=25°C “à—e \Ž¦ ¤W Special specification for customer CONNECTION 11 G G :: Gate...