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2SK3647-01 Dataheets PDF



Part Number 2SK3647-01
Manufacturers Fuji Electric
Logo Fuji Electric
Description N-CHANNEL SILICON POWER MOSFET
Datasheet 2SK3647-01 Datasheet2SK3647-01 Datasheet (PDF)

www.DataSheet4U.com 2SK3647-01 FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-sou.

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www.DataSheet4U.com 2SK3647-01 FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Symbol V DS VDSX *5 ID Tc=25°C Ta=25°C ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Tc=25°C Ta=25°C Ratings 100 70 ±41 ±5.2 ** ±164 ±30 41 204.7 20 5 150 2.4 ** +150 -55 to +150 Unit V V A A A V A mJ kV/µs kV/µs W Foot Print Pattern Equivalent circuit schematic D : Drain G : Gate Operating and storage Tch °C temperature range Tstg °C S1 : Source ** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2) *1 L=146µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph *2 Tch < =150°C < < < *3 IF< -I D , -di/dt=50A/µs, Vcc BV DSS , Tch 150°C *4 VDS = 100V *5 VGS=-30V *6 t=60sec f=60Hz = = = S2 : Source Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=100V VGS=0V VDS=80V VGS=0V VGS=±30V VDS=0V ID=15A VGS=10V ID=15A VDS=25V VDS =75V VGS=0V f=1MHz VCC=48V ID=15A VGS=10V RGS=10 Ω V CC =50V ID=30A VGS=10V L=146µH Tch=25°C IF=30A VGS=0V Tch=25°C IF=30A VGS=0V -di/dt=100A/µs Tch=25°C Tch=25°C Tch=125°C 10 34 18 1110 280 22 16 23 31 16 32 13 9 1.10 0.1 0.38 Min. 100 3.0 Typ. Max. 5.0 25 250 100 44 1665 420 33 24 35 47 24 48 20 14 1.65 Units V V µA nA mΩ S pF 9 ns nC 41 A V µs µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Rth(ch-a) Test Conditions channel to case channel to ambient channel to ambient Min. Typ. Max. 0.833 87.0 52.0 Units °C/W °C/W °C/W ** ** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2) 1 2SK3647-01 Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET 200 5 Allowable Power Dissipation PD=f(Tc) Surface mounted on 1000mm ,t=1.6mm FR-4 PCB 2 175 4 150 (Drain pad area : 500mm ) 2 125 3 PD [W] 100 PD [W] 0 25 50 75 100 125 150 75 2 50 1 25 0 0 0 25 50 75 100 125 150 Tc [°C] Tc [°C] 600 Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=48V IAS=17A Typical Output Characteristics ID=f(VDS):80µs Pulse test,Tch=25°C 120 20V 500 100 10V 400 80 EAS [mJ] ID [A] IAS=25A 300 IAS=41A 200 60 8V 7.5V 40 100 20 7.0V 6.5V 6.0V VGS=5.5V 10 12 0 0 25 50 75 100 125 150 0 0 2 4 6 8 starting Tch [°C] VDS [V] Typical Transfer Characteristic ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C 100 100 Typical Transconductance gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C 10 10 ID[A] 1 1 0.1 0 1 2 3 4 5 6 7 8 9 10 0.1 0.1 gfs [S] 1 10 100 VGS[V] ID [A] 2 2SK3647-01 FUJI POWER MOSFET Typical Drain-Source on-state Resistance 0.18 RDS(on)=f(ID):80µs Pulse test, Tch=25°C 100 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=15A,VGS=10V VGS= 6.5V7.0V 7.5V 8V 0.15 6.0V 80 RDS(on) [ Ω ] 0.12 10V 0.09 RDS(on) [ m Ω ] 60 max. 40 typ. 0.06 20V 20 0.03 0.00 0 20 40 60 80 100 120 0 -50 -25 0 25 50 75 100 125 150 ID [A] Tch [°C] 7.0 6.5 6.0 5.5 5.0 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA 14 12 max. 10 Typical Gate Charge Characteristics VGS=f(Qg):ID=30A, Tch=25°C VGS(th) [V] 4.5 VGS [V] 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 min. 8 6 4 2 0 0 10 Vcc= 50V 20 30 40 50 Tch [°C] Qg [nC] 10 1 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µs Pulse test,Tch=25°C 100 10 0 Ciss 10 C [nF] Coss 10 -1 IF [A] 1 Crss 10 -2 10 -1 10 0 10 1 10 2 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VDS [V] VSD [V] 3 2SK3647-01 Typical Switching Characteristics vs. ID 10 3 FUJI POWER MOSFET t=f(ID):Vcc=48V, VGS=10V, RG=10Ω 100 90 Thermal Resistance vs. Drain Pad area t=1.6mm FR-4 PCB tf Rth(ch-a) [°C/W] 80 70 60 50 40 30 20 10 10 2 td(off) t [ns] td(on) 10 1 tr 10 0 0 -1 10 10 0 10 1 10 2 0 1000 2000 3000 2 4000 5000 ID [A] Drain Pad Area [mm ] 10 3 Maximum Avalanche .


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