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2SK3647-01
FUJI POWER MOSFET
200304
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Symbol V DS VDSX *5 ID Tc=25°C Ta=25°C ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Tc=25°C Ta=25°C Ratings 100 70 ±41 ±5.2 ** ±164 ±30 41 204.7 20 5 150 2.4 ** +150 -55 to +150 Unit V V A A A V A mJ kV/µs kV/µs W Foot Print Pattern
Equivalent circuit schematic
D : Drain
G : Gate
Operating and storage Tch °C temperature range Tstg °C S1 : Source ** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2) *1 L=146µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph *2 Tch < =150°C < < < *3 IF< -I D , -di/dt=50A/µs, Vcc BV DSS , Tch 150°C *4 VDS = 100V *5 VGS=-30V *6 t=60sec f=60Hz = = =
S2 : Source
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=100V VGS=0V VDS=80V VGS=0V VGS=±30V VDS=0V ID=15A VGS=10V ID=15A VDS=25V VDS =75V VGS=0V f=1MHz VCC=48V ID=15A VGS=10V RGS=10 Ω V CC =50V ID=30A VGS=10V L=146µH Tch=25°C IF=30A VGS=0V Tch=25°C IF=30A VGS=0V -di/dt=100A/µs Tch=25°C Tch=25°C Tch=125°C 10 34 18 1110 280 22 16 23 31 16 32 13 9 1.10 0.1 0.38
Min.
100 3.0
Typ.
Max.
5.0 25 250 100 44 1665 420 33 24 35 47 24 48 20 14 1.65
Units
V V µA nA mΩ S pF
9
ns
nC
41
A V µs µC
Thermalcharacteristics
Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Rth(ch-a) Test Conditions channel to case channel to ambient channel to ambient
Min.
Typ.
Max.
0.833 87.0 52.0
Units
°C/W °C/W °C/W
**
** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2)
1
2SK3647-01
Characteristics
Allowable Power Dissipation PD=f(Tc)
FUJI POWER MOSFET
200
5
Allowable Power Dissipation PD=f(Tc)
Surface mounted on 1000mm ,t=1.6mm FR-4 PCB
2
175
4
150
(Drain pad area : 500mm )
2
125
3
PD [W]
100
PD [W]
0 25 50 75 100 125 150
75
2
50
1
25
0
0 0 25 50 75 100 125 150
Tc [°C]
Tc [°C]
600
Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=48V
IAS=17A
Typical Output Characteristics
ID=f(VDS):80µs Pulse test,Tch=25°C
120 20V
500
100 10V
400
80
EAS [mJ]
ID [A]
IAS=25A 300 IAS=41A 200
60 8V 7.5V
40
100
20
7.0V 6.5V 6.0V VGS=5.5V 10 12
0 0 25 50 75 100 125 150
0 0 2 4 6 8
starting Tch [°C]
VDS [V]
Typical Transfer Characteristic
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
100 100
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
10 10
ID[A]
1 1
0.1 0 1 2 3 4 5 6 7 8 9 10 0.1 0.1
gfs [S]
1
10
100
VGS[V]
ID [A]
2
2SK3647-01
FUJI POWER MOSFET
Typical Drain-Source on-state Resistance
0.18
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
100
Drain-Source On-state Resistance RDS(on)=f(Tch):ID=15A,VGS=10V
VGS= 6.5V7.0V 7.5V 8V 0.15 6.0V
80
RDS(on) [ Ω ]
0.12 10V 0.09
RDS(on) [ m Ω ]
60 max.
40 typ.
0.06 20V 20 0.03
0.00 0 20 40 60 80 100 120
0 -50 -25 0 25 50 75 100 125 150
ID [A]
Tch [°C]
7.0 6.5 6.0 5.5 5.0
Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA
14 12 max. 10
Typical Gate Charge Characteristics
VGS=f(Qg):ID=30A, Tch=25°C
VGS(th) [V]
4.5
VGS [V]
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 min.
8 6 4 2 0 0 10
Vcc= 50V
20
30
40
50
Tch [°C]
Qg [nC]
10
1
Typical Capacitance C=f(VDS):VGS=0V,f=1MHz
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs Pulse test,Tch=25°C
100
10
0
Ciss
10
C [nF]
Coss 10
-1
IF [A]
1 Crss 10
-2
10
-1
10
0
10
1
10
2
0.1 0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
VDS [V]
VSD [V]
3
2SK3647-01
Typical Switching Characteristics vs. ID
10
3
FUJI POWER MOSFET
t=f(ID):Vcc=48V, VGS=10V, RG=10Ω
100 90
Thermal Resistance vs. Drain Pad area t=1.6mm FR-4 PCB
tf
Rth(ch-a) [°C/W]
80 70 60 50 40 30 20 10
10
2
td(off)
t [ns]
td(on) 10
1
tr
10
0
0
-1
10
10
0
10
1
10
2
0
1000
2000
3000
2
4000
5000
ID [A]
Drain Pad Area [mm ]
10
3
Maximum Avalanche .