2SK3651-01R

www.DataSheet4U.com 2SK3651-01R FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Ratings Unit V 200 V 220 A Continuous drain current ±25 A Pulsed drain current ±100 V Gate-source voltage ±30 A Non-repetitive Avalanche current 25 mJ Maximum Avalanche Energy 372 kV/µs Maximum Drain-Source dV/dt 20 kV/µs Peak Diode Recovery dV/dt 5 Max. power dissipation 3.10 W 85 Operating and storage Tch +150 °C -55 to +150 temperature range Tstg °C Isolation voltage VISO *6 2 kVrms *1 L=1mH, Vcc=48V *2 Tch< =150°C *3 IF< = BVDSS, Tch < = 150°C = -ID, -di/dt=50A/µs, Vcc < *4 VDS < *5 VGS=-30V *6 t=60sec f=60Hz = 250V Item Drain-source voltage Symbol V DS VDSX *5 ID ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-D...