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FLX257XV
GaAs FET & HEMT Chips
FEATURES
High Output Power: P1dB = 33.5dBm(Typ.) High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability
95
40
(Unit: µm)
DESCRIPTION
The FLX257XV chip is a power GaAs FET that is designed for general purpose applications in the X-Band frequency range as it provides superior...
