SI4910DY

Dual N-Channel 40-V (D-S) MOSFET Si4910DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.027 at VGS = 10 V 40 0.032 at VGS = 4.5 V ID (A)a 6.0 4.8 Qg (Typ.) 9.6 S1 1 G1 2 S2 3 G2 4 SO-8 8 D1 7 D1 6 D2 5 D2 Top View Ordering Information: Si4910DY-T1-E3 (Lead (Pb)-free) Si4910DY-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES Halogen-free According to IEC 61249-2-21 Available TrenchFET® Power MOSFET 100 % Rg and UIS Tested APPLICATIONS CCFL Inverter D1 D2 G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ...