HEXFET Power MOSFET
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PD - 95529
IRF3709ZCSPbF IRF3709ZCLPbF
Applications l High Frequency Synchronous Buck Converters f...
Description
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PD - 95529
IRF3709ZCSPbF IRF3709ZCLPbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free
HEXFET® Power MOSFET
VDSS RDS(on) max
30V 6.3m:
Qg
17nC
Benefits l Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current
D2Pak IRF3709ZCS
TO-262 IRF3709ZCL
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
30 ± 20 87 62
Units
V A
c
h h
350 79 40 0.53 -55 to + 175 300 (1.6mm from case) W/°C °C W
Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC RθJA Junction-to-Case
i
Typ.
Max.
1.89 40
Units
°C/W
Junction-to-Ambient (PCB Mount)
g
––– –––
Notes through are on page 11
www.irf.com
1
7/20/04
IRF3709ZCS/LPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward L...
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