2SK246 Transistor Datasheet

2SK246 Datasheet, PDF, Equivalent


Part Number

2SK246

Description

N-CHANNEL JUNCTION TYPE Field Effect Transistor

Manufacture

Toshiba Semiconductor

Total Page 4 Pages
Datasheet
Download 2SK246 Datasheet


2SK246
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK246
For Constant Current, Impedance
Converter and DC-AC High Input
Impedance Amplifier Circuit Applications
2SK246
Unit: mm
· High breakdown voltage: VGDS = 50 V
· High input impedance: IGSS = −1 nA (max) (VGS = 30 V)
Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Symbol
VGDS
IG
PD
Tj
Tstg
Rating
-50
10
300
125
-55~125
Unit
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1C
Weight: 0.21 g (typ.)
Characteristics
Symbol
Test Condition
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
IGSS
V (BR) GDS
VGS = -30 V, VDS = 0
VDS = 0, IG = -100 mA
IDSS
VDS = 10 V, VGS = 0
(Note)
VGS (OFF) VDS = 10 V, ID = 0.1 mA
ïYfsï
VDS = 10 V, VGS = 0, f = 1 kHz
Ciss VDS = 10 V, VGS = 0, f = 1 MHz
Crss VDG = 10 V, ID = 0, f = 1 MHz
Note: IDSS classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6~14 mA
Min Typ. Max Unit
¾ ¾ -1.0 nA
-50 ¾
¾
V
1.2 ¾ 14 mA
-0.7
¾ -6.0
V
1.5 ¾ ¾ mS
¾ 9.0 ¾ pF
¾ 2.5 ¾ pF
1 2003-03-25

2SK246
2SK246
2 2003-03-25


Features TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK246 For Cons tant Current, Impedance Converter and D C-AC High Input Impedance Amplifier Cir cuit Applications 2SK246 Unit: mm · High breakdown voltage: VGDS = −50 V · High input impedance: IGSS = −1 nA (max) (VGS = −30 V) Maximum Ratings (Ta = 25°C) Characteristics Gate-dra in voltage Gate current Drain power dis sipation Junction temperature Storage t emperature range Symbol VGDS IG PD Tj Tstg Rating -50 10 300 125 -55~125 Un it V mA mW °C °C Electrical Characte ristics (Ta = 25°C) JEDEC TO-92 JEI TA SC-43 TOSHIBA 2-5F1C Weight: 0.2 1 g (typ.) Characteristics Symbol Te st Condition Gate cut-off current Gate -drain breakdown voltage Drain current Gate-source cut-off voltage Forward tra nsfer admittance Input capacitance Reve rse transfer capacitance IGSS V (BR) G DS VGS = -30 V, VDS = 0 VDS = 0, IG = -100 mA IDSS VDS = 10 V, VGS = 0 (No te) VGS (OFF) VDS = 10 V, ID = 0.1 mA ïYfsï VDS = 10 V, VGS = 0, f = 1 k.
Keywords 2SK246, datasheet, pdf, Toshiba Semiconductor, N-CHANNEL, JUNCTION, TYPE, Field, Effect, Transistor, SK246, K246, 246, 2SK24, 2SK2, 2SK, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)