TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK246
For Constant Current, Impedance Converter and DC-...
TOSHIBA Field Effect
Transistor Silicon N Channel Junction Type
2SK246
For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplifier Circuit Applications
2SK246
Unit: mm
· High breakdown voltage: VGDS = −50 V · High input impedance: IGSS = −1 nA (max) (VGS = −30 V)
Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range
Symbol
VGDS IG PD Tj Tstg
Rating
-50 10 300 125 -55~125
Unit
V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1C
Weight: 0.21 g (typ.)
Characteristics
Symbol
Test Condition
Gate cut-off current Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance
IGSS V (BR) GDS
VGS = -30 V, VDS = 0 VDS = 0, IG = -100 mA
IDSS
VDS = 10 V, VGS = 0
(Note)
VGS (OFF) VDS = 10 V, ID = 0.1 mA
ïYfsï
VDS = 10 V, VGS = 0, f = 1 kHz
Ciss VDS = 10 V, VGS = 0, f = 1 MHz Crss VDG = 10 V, ID = 0, f = 1 MHz
Note: IDSS classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6~14 mA
Min Typ. Max Unit
¾ ¾ -1.0 nA
-50 ¾
¾
V
1.2 ¾ 14 mA
-0.7
¾ -6.0
V
1.5 ¾ ¾ mS
¾ 9.0 ¾ pF
¾ 2.5 ¾ pF
1 2003-03-25
2SK246
2 2003-03-25
2SK246
3 2003-03-25
2SK246
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can...