KM641001A SRAM Datasheet

KM641001A Datasheet, PDF, Equivalent


Part Number

KM641001A

Description

CMOS SRAM

Manufacture

Samsung Semiconductor

Total Page 8 Pages
Datasheet
Download KM641001A Datasheet


KM641001A
www.DataSheet4U.com
PRELIMINARY
KM641001A
CMOS SRAM
Document Title
256Kx 4 High Speed Static RAM(5V Operating), Evolutionary Pin Out.
Operated at Commercial Temperature Range.
Revision History
Rev. No.
Rev. 0.0
Rev. 1.0
Rev. 2.0
Rev. 3.0
History
Initial release with Design Target.
Release to Preliminary Data Sheet.
1.1. Replace Design Target to Preliminary
Release to final Data Sheet.
2.1. Delete Preliminary
Update D.C and A.C parameters.
3.1. Update D.C parameters
Items
Previous spec.
(15/17/20ns part)
Icc 190/180/170mA
Isb 30mA
Isb1 10mA
3.2. Update A.C parameters
Items
Previous spec.
(15/17/20ns part)
tCW 12/12/13ns
tAW 12/12/13ns
tWP1(OE=H)
12/12/13ns
tDW 8/9/10ns
Updated spec.
(15/17/20ns part)
145/145/140mA
25mA
8mA
Updated spec.
(15/17/20ns part)
10/11/12ns
10/11/12ns
10/11/12ns
7/8/9ns
Draft Data
Remark
Jan. 18th, 1995 Design Target
Apr. 22th, 1995 Preliminary
Feb. 29th, 1996 Final
Jul. 16th, 1996 Final
Rev. 4.0
Rev. 5.0
Update D.C and A.C parameters
4.1. Update D.C and A.C parameters.
Items
Previous spec.
(15/17/20ns part)
Updated spec.
(15/17/20ns part)
Icc
145/145/140mA
125/125/120mA
tOW
3/4/5ns
3/3/3ns
4.2. Add the test condition for VOH1 with VCC=5V±5% at 25°C
4.3. Add timing diagram to define tWP as ″(Timing Wave Form of
Write Cycle(CS=Controlled)
5.1. Delete 17ns Part
Jun. 2nd, 1997 Final
Feb. 25th, 1998 Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions,
please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev 5.0
February 1998

KM641001A
www.DataSheet4U.com
PRELIMINARY
KM641001A
CMOS SRAM
256K x 4 Bit (with OE)High-Speed CMOS Static RAM
FEATURES
• Fast Access Time 15, 20ns(Max.)
• Low Power Dissipation
Standby (TTL) : 25mA(Max.)
(CMOS) : 8mA(Max.)
Operating KM641001A - 15 : 125mA(Max.)
KM641001A - 20 : 120mA(Max.)
• Single 5.0V±10% Power Supply
• TTL Compatible Inputs and Outputs
• I/O Compatible with 3.3V Device
• Fully Static Operation
- No Clock or Refresh required
• Three State Outputs
• Standard Pin Configuration
KM641001AJ : 28-SOJ-400A
GENERAL DESCRIPTION
The KM641001A is a 1,048,576-bit high-speed Static Random
Access Memory organized as 262,144 words by 4 bits. The
KM641001A uses 4 common input and output lines and has an
output enable pin which operates faster than address access
time at read cycle. The device is fabricated using SAMSUNGs
advanced CMOS process and designed for high-speed circuit
technology. It is particularly well suited for use in high-density
high-speed system applications. The KM641001A is packaged
in a 400 mil 28-pin plastic SOJ.
PIN CONFIGURATION(Top View)
FUNCTIONAL BLOCK DIAGRAM
Clk Gen.
A2
A3
A4
A5
A6
A7
A8
A9
A10
I/O1 ~ I/O4
Data
Cont.
Pre-Charge Circuit
Memory Array
512 Rows
512x4 Columns
I/O Circuit &
Column Select
CLK
Gen.
A1 A12 A14 A16
A0 A11 A13 A15 A17
CS
WE
OE
A0 1
A1 2
A2 3
A3 4
A4 5
A5 6
A6 7
A7 8
A8 9
A9 10
A10 11
CS 12
OE 13
Vss 14
SOJ
28 Vcc
27 A17
26 A16
25 A15
24 A14
23 A13
22 A12
21 A11
20 N.C
19 I/O4
18 I/O3
17 I/O2
16 I/O1
15 WE
PIN FUNCTION
Pin Name
A0 - A17
WE
CS
OE
I/O1 ~ I/O4
VCC
VSS
N.C
Pin Function
Address Inputs
Write Enable
Chip Select
Output Enable
Data Inputs/Outputs
Power(+5.0V)
Ground
No Connection
-2-
Rev 5.0
February 1998


Features www.DataSheet4U.com PRELIMINARY CMOS SR AM KM641001A Document Title 256Kx 4 H igh Speed Static RAM(5V Operating), Evo lutionary Pin Out. Operated at Commerci al Temperature Range. Revision History Rev. No. Rev. 0.0 Rev. 1.0 History Ini tial release with Design Target. Releas e to Preliminary Data Sheet. 1.1. Repla ce Design Target to Preliminary Release to final Data Sheet. 2.1. Delete Preli minary Update D.C and A.C parameters. 3 .1. Update D.C parameters Previous spec . Items (15/17/20ns part) Icc 190/180/1 70mA Isb 30mA Isb1 10mA 3.2. Update A.C parameters Previous spec. Items (15/17 /20ns part) tCW 12/12/13ns tAW 12/12/13 ns tWP1(OE=H) 12/12/13ns tDW 8/9/10ns D raft Data Jan. 18th, 1995 Apr. 22th, 19 95 Remark Design Target Preliminary Re v. 2.0 Feb. 29th, 1996 Final Rev. 3. 0 Jul. 16th, 1996 Updated spec. (15/17 /20ns part) 145/145/140mA 25mA 8mA Upda ted spec. (15/17/20ns part) 10/11/12ns 10/11/12ns 10/11/12ns 7/8/9ns Jun. 2nd, 1997 Final Rev. 4.0 Update D.C and A.C parameters 4.1. Upda.
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