KM641001BL SRAM Datasheet

KM641001BL Datasheet, PDF, Equivalent


Part Number

KM641001BL

Description

CMOS SRAM

Manufacture

Samsung Semiconductor

Total Page 9 Pages
Datasheet
Download KM641001BL Datasheet


KM641001BL
www.DataSheet4U.com
PRELIMINARY
KM641001B/BL
CMOS SRAM
Document Title
256Kx4 Bit (with OE) High Speed Static RAM(5V Operating), Evolutionary Pin out.
Revision History
Rev.No.
Rev. 0.0
Rev.1.0
Rev. 2.0
Rev.3.0
History
Initial release with Design Target.
Release to Preliminary Data Sheet.
1.1. Replace Design Target to Preliminary.
Release to Final Data Sheet.
2.1. Delete Preliminary.
2.2. Delete 17ns, L-version and Industrial Temperature Part.
2.3. Delete VOH1=3.95V.
2.4. Delete Data Retention Characteristics and Wave form.
2.5. Relex operating current.
Speed
Previous
Now
15ns
120mA
120mA
17ns
110mA
-
20ns
100mA
118mA
3.1. Add Low power Version.
3.2. Add Data Retention chcracteristics.
Draft Data
Feb. 1st 1997
Jun. 1st 1997
Remark
Design Target
Preliminary
Feb. 6th 1998 Final
Jul. 28th 1998 Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev. 3.0
July 1998

KM641001BL
www.DataSheet4U.com
PRELIMINARY
KM641001B/BL
CMOS SRAM
256K x 4 Bit (with OE)High-Speed CMOS Static RAM
FEATURES
• Fast Access Time 15, 20ns(Max.)
• Low Power Dissipation
Standby (TTL) : 20mA(Max.)
(CMOS) : 5mA(Max.)
1mA(Max) L-Ver. Only
Operating KM641001B/BL - 15 : 120mA(Max.)
KM641001B/BL - 20 : 118mA(Max.)
• Single 5.0V±10% Power Supply
• TTL Compatible Inputs and Outputs
• Fully Static Operation
- No Clock or Refresh required
• Three State Outputs
• 2V Minimum Data Retention ; L-Ver. only
• Standard Pin Configuration
KM641001B/BLJ : 28-SOJ-400A
GENERAL DESCRIPTION
The KM641001B is a 1,048,576-bit high-speed Static Random
Access Memory organized as 262,144 words by 4 bits. The
KM641001B/BL uses 4 common input and output lines and has
at output enable pin which operates faster than address access
time at read cycle. The device is fabricated using SAMSUNGs
advanced CMOS process and designed for high-speed circuit
technology. It is particularly well suited for use in high-density
high-speed system applications. The KM641001B/BL is pack-
aged in a 400 mil 28-pin plastic SOJ.
FUNCTIONAL BLOCK DIAGRAM
PIN CONFIGURATION(Top View)
Clk Gen.
A0
A1
A2
A3
A4
A5
A6
A7
A8
I/O1~I/O4
Data
Cont.
Pre-Charge Circuit
Memory Array
512 Rows
512x4 Columns
I/O Circuit &
Column Select
CLK
Gen.
A9 A10 A11 A12 A13 A14 A15 A16 A17
CS
WE
OE
A0 1
A1 2
A2 3
A3 4
A4 5
A5 6
A6 7
A7 8
A8 9
A9 10
A10 11
CS 12
OE 13
Vss 14
SOJ
28 Vcc
27 A17
26 A16
25 A15
24 A14
23 A13
22 A12
21 A11
20 N.C
19 I/O4
18 I/O3
17 I/O2
16 I/O1
15 WE
PIN FUNCTION
Pin Name
A0 - A17
WE
CS
OE
I/O1 ~ I/O4
VCC
VSS
N.C
Pin Function
Address Inputs
Write Enable
Chip Select
Output Enable
Data Inputs/Outputs
Power(+5.0V)
Ground
No Connection
-2-
Rev. 3.0
July 1998


Features www.DataSheet4U.com PRELIMINARY CMOS SR AM KM641001B/BL Document Title 256Kx4 Bit (with OE) High Speed Static RAM(5V Operating), Evolutionary Pin out. Rev ision History Rev. No. Rev. 0.0 Rev.1.0 History Initial release with Design Ta rget. Release to Preliminary Data Sheet . 1.1. Replace Design Target to Prelimi nary. Release to Final Data Sheet. 2.1. Delete Preliminary. 2.2. Delete 17ns, L-version and Industrial Temperature Pa rt. 2.3. Delete VOH1=3.95V. 2.4. Delete Data Retention Characteristics and Wav e form. 2.5. Relex operating current. S peed Previous Now 15ns 120mA 120mA 17ns 110mA 20ns 100mA 118mA 3.1. Add Low po wer Version. 3.2. Add Data Retention ch cracteristics. Draft Data Feb. 1st 1997 Jun. 1st 1997 Remark Design Target Pre liminary Rev. 2.0 Feb. 6th 1998 Fina l Rev.3.0 Jul. 28th 1998 Final The attached data sheets are prepared and a pproved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the righ t to change the specifications. SAMSUNG Electronics will evalua.
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