2SA1179 Transistors Datasheet

2SA1179 Datasheet, PDF, Equivalent


Part Number

2SA1179

Description

PNP / NPN Epitaxial Planar Silicon Transistors

Manufacture

Sanyo Semicon Device

Total Page 5 Pages
Datasheet
Download 2SA1179 Datasheet


2SA1179
Ordering number : EN3218B
2SA1179 / 2SC2812
SANYO Semiconductors
DATA SHEET
PNP / NPN Epitaxial Planar Silicon Transistors
2SA1179 / 2SC2812 Low-Frequency General-Purpose
Amplifier Applications
Features
Miniature package facilitates miniaturization in end products.
High breakdown voltage.
Specifications ( ) : 2SA1179
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Marking: 2SA1179: M / 2SC2812: L
ICBO
IEBO
hFE
fT
VCB=(--)35V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)6V, IC=(--)1mA
2SC2812 : VCE=6V, IC=1mA
2SA1179 : VCE=--6V, IC=--10mA
*: The 2SA1179 / 2SC2812 are classified by 1mA hFE as follws:
Rank
5
6
7
hFE
135 to 270
200 to 400
300 to 600
Ratings
(--)55
(--)50
(--)5
(--)150
(--)300
(--)30
200
150
--55 to +150
Unit
V
V
V
mA
mA
mA
mW
°C
°C
min
135*
Ratings
typ
max
Unit
(--)0.1 μA
(--)0.1 μA
600*
100 MHz
(180)
MHz
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
20608 TI IM TC-00001200 / 11707CA TI IM X-2476, 2478 No.3218-1/5

2SA1179
Continued from preceding page.
Parameter
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
2SA1179 / 2SC2812
Symbol
Conditions
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCB=(--)6V, f=1MHz
IC=(--)50mA, IB=(--)5mA
IC=(--)50mA, IB=(--)5mA
IC=(--)10μA, IE=0A
IC=(--)1mA, RBE=
IE=(--)10μA, IC=0A
Package Dimensions
unit : mm (typ)
7013A-009
2.9 0.1
3
1
0.95
2
0.4
1 : Base
2 : Emitter
3 : Collector
SANYO : CP
Ratings
min typ
(4.0)3.0
(--0.15)0.1
(--)55
(--)50
(--)5
max
(--)0.5
(--)1.0
Unit
pF
V
V
V
V
V
--16
--12
--8
--4
0
0
--240
--200
--160
--120
--80
--40
0
0
IC -- VCE
2SA1179
--50-μ-4A5μA
--40μ--A35μA
--30μA
--25μA
--20μA
--15μA
--10μA
--5μA
IB=0μA
--10 --20 --30 --40 --50
Collector-to-Emitter Voltage, VCE -- V IT12000
IC -- VBE
2SA1179
VCE= --6V
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2
Base-to-Emitter Voltage, VBE -- V IT12002
IC -- VCE
20
50μA
45μA
16
40μA
35μA
12 30μA
25μA
8 20μA
2SC2812
15μA
4 10μA
5μA IB=0μA
0
0 10 20 30 40 50
Collector-to-Emitter Voltage, VCE -- V IT12001
IC -- VBE
240
2SC2812
VCE=6V
200
160
120
80
40
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE -- V IT12003
No.3218-2/5


Features Ordering number : EN3218B 2SA1179 / 2SC 2812 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Tran sistors 2SA1179 / 2SC2812 Low-Frequency General-Purpose Amplifier Applications Features • Miniature package facilit ates miniaturization in end products. High breakdown voltage. Specificati ons ( ) : 2SA1179 Absolute Maximum Rati ngs at Ta=25°C Parameter Collector-to -Base Voltage Collector-to-Emitter Volt age Emitter-to-Base Voltage Collector C urrent Collector Current (Pulse) Base C urrent Collector Dissipation Junction T emperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg El ectrical Characteristics at Ta=25°C C onditions Parameter Symbol Condition s Collector Cutoff Current Emitter Cut off Current DC Current Gain Gain-Bandwi dth Product Marking: 2SA1179: M / 2SC28 12: L ICBO IEBO hFE fT VCB=(--)35V, I E=0A VEB=(--)4V, IC=0A VCE=(--)6V, IC=( --)1mA 2SC2812 : VCE=6V, IC=1mA 2SA1179 : VCE=--6V, IC=--10mA *: The 2SA1179 / 2SC2812 are classified.
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