Document
Ordering number : EN3218B
2SA1179 / 2SC2812
SANYO Semiconductors
DATA SHEET
PNP / NPN Epitaxial Planar Silicon Transistors
2SA1179 / 2SC2812 Low-Frequency General-Purpose
Amplifier Applications
Features
• Miniature package facilitates miniaturization in end products. • High breakdown voltage.
Specifications ( ) : 2SA1179
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP IB PC Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current DC Current Gain
Gain-Bandwidth Product
Marking: 2SA1179: M / 2SC2812: L
ICBO IEBO hFE
fT
VCB=(--)35V, IE=0A VEB=(--)4V, IC=0A VCE=(--)6V, IC=(--)1mA 2SC2812 : VCE=6V, IC=1mA 2SA1179 : VCE=--6V, IC=--10mA
*: The 2SA1179 / 2SC2812 are classified.