UPG2155TB

www.DataSheet4U.com GaAs INTEGRATED CIRCUIT UPG2155TB NEC’s L-BAND 4 W HIGH POWER SPDT SWITCH DESCRIPTION The µPG2155TB is an L-band SPDT GaAs FET switch developed for digital cellular or cordless telephone applications. The device can operate from 500 MHz to 2.5 GHz, with low insertion loss and high linearity. FEATURES Low insertion loss : LINS = 0.35 dB TYP. @ Vcont = +2.6 V/0 V, f = 1.0 GHz : LINS = 0.40 dB TYP. @ Vcont = +2.6 V/0 V, f = 2.0 GHz : LINS = 0.45 dB TYP. @ Vcont = +2.6 V/0 V, f = 2.5 GHz High linearity : 2f0 = 70 dBc TYP. @ Vcont = +2.6 V/0 V, f = 0.9 GHz, Pin = +34.5 dBm : 3f0 = 75 dBc TYP. @ Vcont = +2.6 V/0 V, f = 0.9 GHz, Pin = +34.5 dBm 6-pin super minimold package (2.1 × 2.0 × 0.9 mm) APPLICATION GSM Triple/Quad band digital cellular ORDERING INFORMATION Part Number Order Number Package Marking G4R Supplying Form Embossed tape 8 mm wide Pin 4, 5, 6 face the perforation side of the tape Qty 3 kpcs/reel µPG2155TB-E4 µPG2155TB-E4-A 6-pin super minimold (Pb-Free) Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: µPG2155TB-A Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. Document No. PG10583EJ01V0DS (1st edition) Date Published November 2005 CP(K) © NEC Compound Semiconductor Devices, Ltd. 2005 UPG2155TB PIN CONNECTIONS (Top View) 1 2 3 6 5 4 6 5 4 (Bottom View) 1 2 3 Pin No. 1 2 3 4 5 6 Pin Name OUT1 GND OUT2 Vcont2 IN Vc...