2SK3596-01SJ MOSFET Datasheet

2SK3596-01SJ Datasheet, PDF, Equivalent


Part Number

2SK3596-01SJ

Description

(2SK3596-01x) N-CHANNEL SILICON POWER MOSFET

Manufacture

Fuji Electric

Total Page 4 Pages
Datasheet
Download 2SK3596-01SJ Datasheet


2SK3596-01SJ
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2SK3596-01L,S,SJ
FUJI POWER MOSFET
Super FAP-G Series
Features
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
P4
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
200 V
VDSX *5
170 V
Continuous drain current
ID
±30 A
Pulsed drain current
ID(puls]
±120
A
Gate-source voltage
VGS
±30 V
Non-repetitive Avalanche current IAS *2
30 A
Maximum Avalanche Energy
EAS *1
387 mJ
Maximum Drain-Source dV/dt
dVDS/dt *4
20 kV/µs
Peak Diode Recovery dV/dt
Max. power dissipation
dV/dt *3
PD Ta=25°C
Tc=25°C
5
1.67
135
kV/µs
W
Operating and storage
Tch
+150
°C
temperature range
Tstg
-55 to +150
°C
*1 L=689µH, Vcc=48V *2 Tch<=150°C
*4 VDS <= 200V *5 VGS=-30V
*3 IF<= -ID, -di/dt=50A/µs, Vcc<= BVDSS, Tch<= 150°C
Electrical characteristics (Tc =25°C unless otherwise specified)
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=200V VGS=0V
VDS=160V VGS=0V
VGS=±30V VDS=0V
Tch=25°C
Tch=125°C
ID=15A VGS=10V
ID=15A VDS=25V
VDS=75V
VGS=0V
f=1MHz
VCC=48V ID=15A
VGS=10V
RGS=10
VCC=100V
ID=30A
VGS=10V
L=100µH Tch=25°C
IF=30A VGS=0V Tch=25°C
IF=30A VGS=0V
-di/dt=100A/µs Tch=25°C
Min.
200
3.0
12.5
30
Typ.
10
50
25
1960
260
18
20
17
53
19
51
15
16
1.10
0.19
1.4
Max.
5.0
25
250
100
66
2940
390
27
30
26
80
29
76.5
22.5
24
1.65
Units
V
V
µA
nA
m
S
pF
ns
nC
A
V
µs
µC
Thermalcharacteristics
Item
Thermal resistance
www.fujielectric.co.jp/denshi/scd
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
0.926 °C/W
75.0 °C/W
1

2SK3596-01SJ
2SK3596-01L,S,SJ
Characteristics
Allowable Power Dissipation
PD=f(Tc)
200
175
150
125
100
75
50
25
0
0 25 50 75 100 125 150
Tc [°C]
Typical Output Characteristics
ID=f(VDS):80µs Pulse test,Tch=25°C
120
20V
100
10V
8V
80 7.5V
60 7.0V
40 6.5V
6.0V
20
VGS=5.5V
0
0 2 4 6 8 10 12
VDS [V]
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
100
10
1
0.1
0.1
1 10
ID [A]
100
FUJI POWER MOSFET
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=30A
500
400
300
200
100
0
0 25 50 75 100 125 150
starting Tch [°C]
Typical Transfer Characteristic
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
100
10
1
0.1
0 1 2 3 4 5 6 7 8 9 10
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
0.20
0.15
VGS= 6.0V
5.5V
6.5V
7.0V
7.5V
8V
0.10 10V
20V
0.05
0.00
0
20 40 60 80 100 120
ID [A]
2


Features www.DataSheet4U.com 2SK3596-01L,S,SJ FU JI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Super FA P-G Series Features High speed switchin g Low on-resistance No secondary breado wn Low driving power Avalanche-proof A pplications Switching regulators UPS (U ninterruptible Power Supply) DC-DC conv erters P4 Maximum ratings and charact eristicAbsolute maximum ratings (Tc=25 C unless otherwise specified) Item Dra in-source voltage Continuous drain curr ent Pulsed drain current Gate-source vo ltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain- Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and st orage temperature range Symbol V DS VDS X *5 ID ID(puls] VGS IAS *2 EAS *1 dVDS /dt *4 dV/dt *3 PD Ta=25°C Tc=25°C Ra tings 200 170 ±30 ±120 ±30 30 387 20 5 1.67 135 +150 -55 to +150 Unit V V A A V A mJ kV/µs kV/µs W Equivalent c ircuit schematic Drain(D) Gate(G) Sour ce(S) Tch °C Tstg °C < < *3 I F -I D , -di/dt=50A/µs, Vcc BV DSS , Tch.
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