AUTOMOTIVE MOSFET
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PD - 95873
AUTOMOTIVE MOSFET
IRFP2907Z
HEXFET® Power MOSFET
D
Features
l l l l l
Advanced Proce...
Description
www.DataSheet4U.com
PD - 95873
AUTOMOTIVE MOSFET
IRFP2907Z
HEXFET® Power MOSFET
D
Features
l l l l l
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
VDSS = 75V RDS(on) = 4.5mΩ
G S
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
ID = 90A
TO-247AC
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS EAS (tested) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (See Fig. 9) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current
Max.
170 120 90 680 310 2.0 ± 20 520 690 See Fig.12a,12b,15,16 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm)
Units
A
Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche Current
W W/°C V mJ A mJ °C
i
d
Repetitive Avalanche Energy Operating Junction a...
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