SI7601DN

www.DataSheet4U.com SPICE Device Model Si7601DN Vishay Siliconix P-Channel 20-V (D-S) MOSFET CHARACTERISTICS P-Channel Vertical DMOS Macro Model (Subcircuit Model) Level 3 MOS Apply for both Linear and Switching Application Accurate over the −55 to 125°C Temperature Range Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 5-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 74145 S-70044Rev. B, 22-Jan-07 www.vishay.com 1 SPICE Device Model Si7601DN Vishay Siliconix SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage On-State Drain...