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2N6784 Dataheets PDF



Part Number 2N6784
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel Power MOSFET
Datasheet 2N6784 Datasheet2N6784 Datasheet (PDF)

www.DataSheet4U.com 2N6784 Data Sheet December 2001 2.25A, 200V, 1.500 Ohm, N-Channel Power MOSFET [ /Title (2N67 84) /Subject (2.25A , 200V, 1.500 Ohm, NChannel Power MOSFET) /Autho r () The 2N6784 is an N-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This typ.

  2N6784   2N6784



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www.DataSheet4U.com 2N6784 Data Sheet December 2001 2.25A, 200V, 1.500 Ohm, N-Channel Power MOSFET [ /Title (2N67 84) /Subject (2.25A , 200V, 1.500 Ohm, NChannel Power MOSFET) /Autho r () The 2N6784 is an N-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. Features • 2.25A, 200V • rDS(ON) = 1.500Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device Ordering Information PART NUMBER 2N6784 PACKAGE TO-205AF BRAND 2N6784 • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” NOTE: When ordering, use the entire part number. Symbol D G S Packaging JEDEC TO-205AF DRAIN (CASE) SOURCE GATE ©2001 Fairchild Semiconductor Corporation 2N6784 Rev. B 2N6784 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified 2N6784 200 200 2.25 1.5 9 ±20 2.25 9 15 0.12 -55 to 150 300 260 UNITS V V A A A V A A W W/oC oC oC oC Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS Pulse Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg CAUTION: Stresses above those listed in “Absolute Maximum Ratings.


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