Power MOSFET. 2N6784 Datasheet

2N6784 MOSFET. Datasheet pdf. Equivalent

Part 2N6784
Description N-Channel Power MOSFET
Feature www.DataSheet4U.com 2N6784 Data Sheet December 2001 2.25A, 200V, 1.500 Ohm, N-Channel Power MOSFET.
Manufacture Fairchild Semiconductor
Datasheet
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www.DataSheet4U.com 2N6784 Data Sheet December 2001 2.25A, 2N6784 Datasheet
www.DataSheet4U.com 2N6784 Dimensions in mm (inches). 8.64 2N6784 Datasheet
2N6784 Datasheet
Recommendation Recommendation Datasheet 2N6784 Datasheet




2N6784
www.DataSheet4U.com
Data Sheet
December 2001
2N6784
[ /Title
(2N67
84)
/Sub-
ject
(2.25A
, 200V,
1.500
Ohm,
N-
Chan-
nel
Power
MOS-
FET)
/Autho
r ()
2.25A, 200V, 1.500 Ohm, N-Channel Power
MOSFET
The 2N6784 is an N-Channel enhancement mode silicon
gate power MOS field effect transistor designed for
applications such as switching regulators, switching
converters, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. This type can be operated directly from
integrated circuits.
Ordering Information
PART NUMBER
PACKAGE
BRAND
2N6784
TO-205AF
2N6784
NOTE: When ordering, use the entire part number.
Features
• 2.25A, 200V
• rDS(ON) = 1.500
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-205AF
DRAIN
(CASE)
SOURCE
GATE
©2001 Fairchild Semiconductor Corporation
2N6784 Rev. B



2N6784
2N6784
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
2N6784
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
200
V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
200
V
Continuous Drain
TC = 100oC . .
Current
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. ID
..
2.25
1.5
A
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
9
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
V
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
2.25
A
Pulse Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
9
A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15 W
0.12
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Diode Forward Voltage
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BVDSS
VGS(TH)
IDSS
VDS(ON)
IGSS
rDS(ON)
VSD
gfs
td(ON)
tr
td(OFF)
tf
CISS
COSS
CRSS
RθJC
RθJA
ID = 0.25mA, VGS = 0V
VGS = VDS, ID = 0.5mA
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TC = 125oC
ID = 2.25A, VGS = 10V
VGS = ±20V
ID = 1.5A, VGS = 10V, TA = 25oC
ID = 1.5A, VGS = 10V, TA = 125oC
IS = 2.25A, VGS = 0V
VDS = 5V, ID = 1.5A
VDD 75V, ID = 1.5A, RG = 50
(Figure 17) MOSFET Switching Times are
Essentially Independent of Operating
Temperature
VDS = 25V, VGS = 0V, f = 1MHz
(Figure 14)
Free Air Operation
200 - - V
2- 4 V
- - 250 µA
- - 1000 µA
- - 3.37 V
- - ±100 nA
-
1.0 1.500
- - 2.81
0.7 - 1.5 V
0.9 1.3 2.7
S
- - 15 ns
- - 20 ns
- - 30 ns
- - 20 ns
60 135 200
pF
20 60 80 pF
5 16 25 pF
- - 8.33 oC/W
- - 175 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
Reverse Recovery Time
Reverse Recovered Charge
trr
QRR
TJ = 150oC, ISD = 2.25A, dISD/dt = 100A/µs
TJ = 150oC, ISD = 2.25A, dISD/dt = 100A/µs
- 290 -
- 2.0 -
NOTES:
2. Pulse test: pulse width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal impedance curve (Figure 3).
UNITS
ns
µC
©2001 Fairchild Semiconductor Corporation
2N6784 Rev. B





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