Dual SO-8 MOSFET
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PD - 96919A
IRF7904PbF
HEXFET® Power MOSFET
Applications l Dual SO-8 MOSFET for POL Converters in ...
Description
www.DataSheet4U.com
PD - 96919A
IRF7904PbF
HEXFET® Power MOSFET
Applications l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game Consoles and Set-Top Box
VDSS
30V
Q1 16.2m:@VGS = 10V Q2 10.8m:@VGS = 10V
RDS(on) max
ID
7.6A 11A
Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating l Improved Body Diode Reverse Recovery l 100% Tested for RG l Lead-Free
B
9 T ÃÃ9! T ÃÃ9! T ÃÃ9!
SO-8
T! T! B!
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range 7.6 6.1 61 1.4 0.9 0.011 -55 to + 150
Q1 Max.
30 ± 20
Q2 Max.
Units
V
11 8.9 89 2.0 1.3 0.016 W/°C °C W A
c
Thermal Resistance
RθJL RθJA Parameter Junction-to-Drain Lead
g Junction-to-Ambient fg
Q1 Max.
20 90
Q2 Max.
20 62.5
Units °C/W
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1
02/08/06
IRF7904PbF
Static @ TJ = 25°C (unless otherwise specified)
BVDSS ∆ΒVDSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Q1&Q2 Q1 Q2 Q1 Q2 VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Gate Threshold Vol...
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