IRF7904UPBF

www.DataSheet4U.com PD - 96084A IRF7904UPbF HEXFET® Power MOSFET Applications l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game Consoles and Set-Top Box VDSS 30V Q1 16.2m:@VGS = 10V Q2 10.8m:@VGS = 10V RDS(on) max ID 7.6A 11A Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating l Improved Body Diode Reverse Recovery l 100% Tested for RG l Lead-Free G1 1 S2 S2 2 3 8 7 6 5 D1 S1 / D2 S1 / D2 S1 / D2 G2 4 SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range 7.6 6.1 61 1.4 0.9 0.011 -55 to + 150 Q1 Max. 30 ± 20 Q2 Max. Units V 11 8.9 89 2.0 1.3 0.016 W/°C °C W A c Thermal Resistance RθJL RθJA Parameter Junction-to-Drain Lead g Junction-to-Ambient fg Q1 Max. 20 90 Q2 Max. 20 62.5 Units °C/W www.irf.com 1 09/19/06 IRF7904UPbF Static @ TJ = 25°C (unless otherwise specified) BVDSS ∆ΒVDSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Q1&Q2 Q1 Q2 Q1 Q2 VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Gate Threshold...