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APM7312
Dual N-Channel Enhancement Mode MOSFET
Features
•
20V/6A , RDS(ON)=35mΩ(typ.) @ VGS=10V RDS(ON)=45mΩ(typ.) @ VGS=4.5V RDS(ON)=110mΩ(typ.) @ VGS=2.5V
Pin Description
SO-8
S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2
• • •
Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SO-8 Package
Top View
D1 D1 D2 D2
Applications
•
Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems.
G1
G2
Ordering and Marking Information
APM7312
Handling Code Tem p. Range Package Code
S1
S2
N-Channel MOSFET
Package Code K : SO-8 Operating Junction Temp. Range C : -55 to 150 °C Handling Code TR : Tape & Reel
APM 7312 K :
APM 7312 XXXXX
XXXXX - Date Code
Absolute Maximum Ratings
Symbol VDSS VGSS ID* IDM Drain-Source Voltage Gate-Source Voltage Parameter
(TA = 25°C unless otherwise noted)
Rating 20 ±16 6 20 A V Unit
Maximum Drain Current – Continuous Maximum Drain Current – Pulsed
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.5 - Feb., 2003 1 www.anpec.com.tw
* Surface Mounted on FR4 Board, t ≤ 10 sec.
APM7312
Absolute Maximum Ratings (Cont.)
Symbol PD Parameter Maximum Power Dissipation TA=25°C TA=100°C TJ TSTG RθjA Maximum Junction Temperature Storage Temperature Range Thermal Resistance – Junction to Ambient
(TA = 25°C unless otherwise noted)
Rating 2.5 1.0 150 -55 to 150 50 W °C °C °C/W Unit
* Surface Mounted on FR4 Board, t ≤ 10 sec.
Electrical Characteristics
Symbol Static BV DSS IDSS V GS(th) IGSS R DS(ON) a V SD
a
(TA = 25°C unless otherwise noted)
APM7312 Min. Typ. Max.
Parameter
Test Condition
Unit
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage
V GS =0V , IDS=250 µ A V DS =18V , V GS =0V V DS =V GS , IDS=250 µ A V GS = ± 16V , V DS =0V V GS =10V , IDS =6A V GS =4.5V , IDS =4A V GS =2.5V , IDS =2A ISD =1.7A , VGS =0V V DS =10V , IDS = 6A V GS =4.5V ,
20 1 0.7 0.9 35 45 110 0.7 12 3 4.5 6 12 10 40 20 1.5 ± 100 40 54 120 1.3 16
V µA V nA mΩ V
Dynamic b Qg Total Gate Charge Q gs Q gd td(ON) Tr td(OFF) Tf C iss C oss C rss Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance
nC
V DD =10V , IDS =1A , V GEN =4.5V , R G =0.2 Ω V GS =0V V DS =15V
5 16 5 450 100 60
ns
pF
Reverse Transfer Capacitance Frequency=1.0MHz
Notes
a b
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% : Guaranteed by design, not subject to production testing
Copyright ANPEC Electronics Corp. Rev. A.5 - Feb., 2003
2
www.anpec.com.tw
APM7312
Typical Characteristics
Output Characteristics
20
VGS=4,5,6,7,8,9,10V
Transfer Characteristics
20
ID-Drain Current (A)
16
ID.