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APM7312 Dataheets PDF



Part Number APM7312
Manufacturers ANPEC
Logo ANPEC
Description Dual N-Channel MOSFET
Datasheet APM7312 DatasheetAPM7312 Datasheet (PDF)

www.DataSheet4U.com APM7312 Dual N-Channel Enhancement Mode MOSFET Features • 20V/6A , RDS(ON)=35mΩ(typ.) @ VGS=10V RDS(ON)=45mΩ(typ.) @ VGS=4.5V RDS(ON)=110mΩ(typ.) @ VGS=2.5V Pin Description SO-8 S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 • • • Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SO-8 Package Top View D1 D1 D2 D2 Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. G1 G2 Ordering and Marking Informa.

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www.DataSheet4U.com APM7312 Dual N-Channel Enhancement Mode MOSFET Features • 20V/6A , RDS(ON)=35mΩ(typ.) @ VGS=10V RDS(ON)=45mΩ(typ.) @ VGS=4.5V RDS(ON)=110mΩ(typ.) @ VGS=2.5V Pin Description SO-8 S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 • • • Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SO-8 Package Top View D1 D1 D2 D2 Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. G1 G2 Ordering and Marking Information APM7312 Handling Code Tem p. Range Package Code S1 S2 N-Channel MOSFET Package Code K : SO-8 Operating Junction Temp. Range C : -55 to 150 °C Handling Code TR : Tape & Reel APM 7312 K : APM 7312 XXXXX XXXXX - Date Code Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM Drain-Source Voltage Gate-Source Voltage Parameter (TA = 25°C unless otherwise noted) Rating 20 ±16 6 20 A V Unit Maximum Drain Current – Continuous Maximum Drain Current – Pulsed ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.5 - Feb., 2003 1 www.anpec.com.tw * Surface Mounted on FR4 Board, t ≤ 10 sec. APM7312 Absolute Maximum Ratings (Cont.) Symbol PD Parameter Maximum Power Dissipation TA=25°C TA=100°C TJ TSTG RθjA Maximum Junction Temperature Storage Temperature Range Thermal Resistance – Junction to Ambient (TA = 25°C unless otherwise noted) Rating 2.5 1.0 150 -55 to 150 50 W °C °C °C/W Unit * Surface Mounted on FR4 Board, t ≤ 10 sec. Electrical Characteristics Symbol Static BV DSS IDSS V GS(th) IGSS R DS(ON) a V SD a (TA = 25°C unless otherwise noted) APM7312 Min. Typ. Max. Parameter Test Condition Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage V GS =0V , IDS=250 µ A V DS =18V , V GS =0V V DS =V GS , IDS=250 µ A V GS = ± 16V , V DS =0V V GS =10V , IDS =6A V GS =4.5V , IDS =4A V GS =2.5V , IDS =2A ISD =1.7A , VGS =0V V DS =10V , IDS = 6A V GS =4.5V , 20 1 0.7 0.9 35 45 110 0.7 12 3 4.5 6 12 10 40 20 1.5 ± 100 40 54 120 1.3 16 V µA V nA mΩ V Dynamic b Qg Total Gate Charge Q gs Q gd td(ON) Tr td(OFF) Tf C iss C oss C rss Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance nC V DD =10V , IDS =1A , V GEN =4.5V , R G =0.2 Ω V GS =0V V DS =15V 5 16 5 450 100 60 ns pF Reverse Transfer Capacitance Frequency=1.0MHz Notes a b : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% : Guaranteed by design, not subject to production testing Copyright  ANPEC Electronics Corp. Rev. A.5 - Feb., 2003 2 www.anpec.com.tw APM7312 Typical Characteristics Output Characteristics 20 VGS=4,5,6,7,8,9,10V Transfer Characteristics 20 ID-Drain Current (A) 16 ID.


AN5532 APM7312 AT45DB081B


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