APM7312 MOSFET Datasheet

APM7312 Datasheet, PDF, Equivalent


Part Number

APM7312

Description

Dual N-Channel Enhancement Mode MOSFET

Manufacture

ANPEC

Total Page 9 Pages
Datasheet
Download APM7312 Datasheet


APM7312
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APM7312
Dual N-Channel Enhancement Mode MOSFET
Features
Pin Description
20V/6A
,
RDS(ON)=35m(typ.)
@
V =10V
GS
RDS(ON)=45m(typ.) @ VGS=4.5V
RDS(ON)=110m(typ.) @ VGS=2.5V
Super High Dense Cell Design for Extremely
Low RDS(ON)
Reliable and Rugged
SO-8 Package
Applications
SO-8
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
D1 D1
D2 D2
Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
G1
G2
Ordering and Marking Information
S1
S2
N-Channel MOSFET
APM7312
Handling Code
Temp. Range
Package Code
Package Code
K : SO-8
Operating Junction Temp. Range
C : -55 to 150°C
Handling Code
TR : Tape & Reel
APM7312 K :
APM7312
XXXXX
XXXXX - Date Code
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
Rating
Unit
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
20
V
±16
ID* Maximum Drain Current – Continuous
IDM Maximum Drain Current – Pulsed
6
A
20
* Surface Mounted on FR4 Board, t 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003
1
www.anpec.com.tw

APM7312
APM7312
Absolute Maximum Ratings (Cont.) (TA = 25°C unless otherwise noted)
Symbol
Parameter
PD Maximum Power Dissipation TA=25°C
TA=100°C
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
RθjA Thermal Resistance – Junction to Ambient
* Surface Mounted on FR4 Board, t 10 sec.
Rating
2.5
1.0
150
-55 to 150
50
Unit
W
°C
°C
°C/W
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
Static
BVDSS
Drain-Source Breakdown
Voltage
VGS=0V , IDS=250µA
IDSS
Zero Gate Voltage Drain
Current
VDS=18V , VGS=0V
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
Drain-Source On-state
Ra
DS(ON)
Resistance
VDS=VGS , IDS=250µA
VGS=±16V , VDS=0V
VGS=10V , IDS=6A
VGS=4.5V , IDS=4A
VGS=2.5V , IDS=2A
VSDa Diode Forward Voltage
Dynamicb
ISD=1.7A , VGS=0V
Qg Total Gate Charge
VDS=10V , IDS= 6A
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VGS=4.5V ,
td(ON)
Tr
Turn-on Delay Time
Turn-on Rise Time
VDD=10V , IDS=1A ,
td(OFF) Turn-off Delay Time
VGEN=4.5V , RG=0.2
Tf Turn-off Fall Time
Ciss Input Capacitance
VGS=0V
Coss Output Capacitance
VDS=15V
Crss Reverse Transfer Capacitance Frequency=1.0MHz
Notes
a : Pulse test ; pulse width 300µs, duty cycle 2%
b : Guaranteed by design, not subject to production testing
APM7312
Min. Typ. Max.
Unit
20 V
1 µA
0.7 0.9 1.5
V
±100 nA
35 40
45 54 m
110 120
0.7 1.3
V
12 16
3
4.5
6 12
5 10
16 40
5 20
450
100
60
nC
ns
pF
Copyright ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003
2
www.anpec.com.tw


Features www.DataSheet4U.com APM7312 Dual N-Chan nel Enhancement Mode MOSFET Features 20V/6A , RDS(ON)=35mΩ(typ.) @ VGS= 10V RDS(ON)=45mΩ(typ.) @ VGS=4.5V RDS (ON)=110mΩ(typ.) @ VGS=2.5V Pin Desc ription SO-8 S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 • • • Super High Dense Cell Design for Extremely Low RDS (ON) Reliable and Rugged SO-8 Package Top View D1 D1 D2 D2 Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. G1 G2 Ordering and Marking Information APM7312 Handling Code Tem p. Range Package Code S1 S2 N-Channe l MOSFET Package Code K : SO-8 Operatin g Junction Temp. Range C : -55 to 150 C Handling Code TR : Tape & Reel APM 7312 K : APM 7312 XXXXX XXXXX - Date Code Absolute Maximum Ratings Symbol V DSS VGSS ID* IDM Drain-Source Voltage G ate-Source Voltage Parameter (TA = 25 C unless otherwise noted) Rating 20 ± 16 6 20 A V Unit Maximum Drain Current – Continuous Maximum Drain Current – Pulsed ANPEC reserves the right to make cha.
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