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FKN1N60SA Dataheets PDF



Part Number FKN1N60SA
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description TRIAC
Datasheet FKN1N60SA DatasheetFKN1N60SA Datasheet (PDF)

www.DataSheet4U.com FKN1N60SA TRIAC (Silicon Bidirectional Thyristor) August 2006 FKN1N60SA TRIAC (Silicon Bidirectional Thyristor) Application Explanation • • • • Switching mode power supply, light dimmer, electric flasher unit, hair drier TV sets, stereo, refrigerator, washing machine Electric blanket, solenoid driver, small motor control Photo copier, electric tool tm 3 1: T1 2: Gate 3: T2 2 TO-92 1 2 3 1 Absolute Maximum Ratings Symbol VDRM VRRM IT (RMS) ITSM Ta = 25°C unless other.

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www.DataSheet4U.com FKN1N60SA TRIAC (Silicon Bidirectional Thyristor) August 2006 FKN1N60SA TRIAC (Silicon Bidirectional Thyristor) Application Explanation • • • • Switching mode power supply, light dimmer, electric flasher unit, hair drier TV sets, stereo, refrigerator, washing machine Electric blanket, solenoid driver, small motor control Photo copier, electric tool tm 3 1: T1 2: Gate 3: T2 2 TO-92 1 2 3 1 Absolute Maximum Ratings Symbol VDRM VRRM IT (RMS) ITSM Ta = 25°C unless otherwise noted Parameter Peak Repetitive Off-State Voltage RMS On-State Current Surge On-State Current Value Sine Wave 50 to 60Hz, Gate Open Commercial frequency, sine full wave 360° conduction, Tc= 70 ℃ Sinewave 1 full cycle, peak value, non-repetitive 50Hz 60Hz Rating 600 1.0 9 10 0.41 5 0.1 5 1 - 40 ~ 125 - 40 ~ 125 Units V A A A A 2s W W V A °C °C I2 t PGM PG (AV) VGM IGM TJ TSTG I2t for Fusing Value corresponding to 1 cycle of halfwave, surge on-state current, tp=8.4ms Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case (note1) (note2) Value 40 160 Units °C/W °C/W Thermal Resistance, Junction to Ambient Note1: Infinite cooling condition. Note2: JESD51-10 ( Test Borad: FR4 3.0”*4.5”*0.062”, Minimum land pad) ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FKN1N60SA Rev. A FKN1N60SA TRIAC (Silicon Bidirectional Thyristor) Electrical Characteristics Symbol IDRM IRRM VTM TC = 25°C unless otherwise noted Parameter Repetieive Peak Off-State Current On-State Voltage I Test Condition VDRM/VRRM applied TC=25°C, ITM=1.12A Instantaneous measurement T2(+), Gate (+) VD=12V, RL=100Ω T2(+), Gate (-) T2(-), Gate (-) T2(+), Gate (+) VD=12V, RL=100Ω TJ=125°C, VD=1/2VDRM (I, II,III) I, III II VD = 12V, ITM = 200mA VD = 12V, IG = 10mA VDRM = 63% Rated, Tj = 125°C, Exponential Rise T2(+), Gate (-) T2(-), Gate (-) II III I Min. Typ. Max. Units 0.2 20 3.0 - 100 1.8 2.0 2.0 2.0 5 5 5 15 15 20 - µA V V V V mA mA mA V mA mA mA V/µs V/µs VGT Gate Trigger Voltage IGT VGD IH IL dv/dt(s) dv/dt(c) Gate Trigger Current Gate Non-Trigger Voltage Holding Current Latching Current Critical Rate of Rise of Off-State Voltag II III Critical-Rate of Rise of Off-State Commutating Voltage (di/dt=-0.7A/uS) Commutation dv/dt test Device FKN1N60SA Test Condition 1. Junction Temperature TJ=125°C 2. Rate of decay of on-state commutating current (di/dt)C 3. Peak off-state voltage VD = 300V Commutating voltage and current waveforms (inductive load) Supply Voltage (di/dt)C Main Current Time Time Main Voltage (dv/dt)C Time VD 2 FKN1N60SA Rev. A www.fairchildsemi.com FKN1N60SA TRIAC (Silicon Bidirectional Thyristor) Quadrant Definitions for a Triac T2 Positive + (+) T2 (+) T2 Quadrant II (-) IGT GATE T1 (+) IGT GATE T1 Quadrant I IGT (-) T2 (-) T2 + IGT Quadrant III (-) IGT GATE T1 (+) IGT GATE T1 Quadrant IV T2 Negative Package Marking and Ordering Information Device Marking K1N60SA Device FKN1N60SA Package TO-92 Packing Bulk Tape Width -- Quantity -- 3 FKN1N60SA Rev. A www.fairchildsemi.com FKN1N60SA TRIAC (Silicon Bidirectional Thyristor) Typical Performance Characteristics Figure 1. On-State Characteristics Figure 2. Power Dissipation PAV[W], Maximum Average Power Dissipation 1.2 ITM[A], On-State Current 1.0 DC 0.8 TJ=125 C 1 o TJ=25 C o 180 120 o o 0.6 90 0.4 o 60 0.2 o 30 o 0.1 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.0 0.2 0.4 0.6 0.8 1.0 VTM[V], On-State Voltage IT RMS[A], On-State Current Figure 3. RMS Current Rating Figure 4. Typical Gate Trigger Current vs Junction Temperature 6 Maximum Allowable Case Temperature, TC[ C] o IGT[mA], Gate Trigger Current 120 30 o o 5 60 110 90 o o o 4 Q3 3 100 120 180 90 Q2 2 DC 80 Q1 1 70 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 -40 0 o 40 80 120 ITRMS[A], On-State Current TJ[ C], Junction Temperature Figure5. Typical Gate Voltage vs Junction Temperarure 1.0 Figure6. Typical Latching Currrent vs Junction Temperature 6 VGT[mA], Gate Trigger Voltage 0.9 0.8 VGT[mA], Gate Trigger Voltage 4 0.7 Q3 Q3 Q1 0.6 2 Q2 0.5 Q1 0.4 -40 0 o 40 80 120 0 -40 0 o 40 80 120 TJ[ C], Junction Temperature TJ[ C], Junction Temperature 4 FKN1N60SA Rev. A www.fairchildsemi.com FKN1N60SA TRIAC (Silicon Bidirectional Thyristor) Typical Performance Characteristics (Continued) Figure7. Typical Holding Current vs Junction Temperature 5 Figure8. Junction to Case Thermal Resistance Junction to Case Thermal Resistance, [ C/W] 50 IH[mA],Holding Current 4 o 40 3 30 Q3 2 Q1 1 20 Q2 10 0 -40 0 o 40 80 120 0 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 TJ[ C], Junction Temperature Time, [S] 5 FKN1N60SA Rev. A www.fairchildsemi.com FKN1N60SA TRIAC (Silicon Bidirectional Thyristor) Package Di.


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