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FKN1N60SA TRIAC (Silicon Bidirectional Thyristor)
August 2006
FKN1N60SA
TRIAC (Silicon Bidirectional Thyristor)
Application Explanation
• • • • Switching mode power supply, light dimmer, electric flasher unit, hair drier TV sets, stereo, refrigerator, washing machine Electric blanket, solenoid driver, small motor control Photo copier, electric tool
tm
3 1: T1 2: Gate 3: T2
2
TO-92
1 2 3
1
Absolute Maximum Ratings
Symbol
VDRM VRRM IT (RMS) ITSM
Ta = 25°C unless otherwise noted
Parameter
Peak Repetitive Off-State Voltage RMS On-State Current Surge On-State Current
Value
Sine Wave 50 to 60Hz, Gate Open Commercial frequency, sine full wave 360° conduction, Tc= 70 ℃ Sinewave 1 full cycle, peak value, non-repetitive 50Hz 60Hz
Rating
600 1.0 9 10 0.41 5 0.1 5 1 - 40 ~ 125 - 40 ~ 125
Units
V A A A A 2s W W V A °C °C
I2 t PGM PG (AV) VGM IGM TJ TSTG
I2t
for Fusing
Value corresponding to 1 cycle of halfwave, surge on-state current, tp=8.4ms
Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature
Thermal Characteristics
Symbol
RθJC RθJA
Parameter
Thermal Resistance, Junction to Case
(note1) (note2)
Value
40 160
Units
°C/W °C/W
Thermal Resistance, Junction to Ambient
Note1: Infinite cooling condition. Note2: JESD51-10 ( Test Borad: FR4 3.0”*4.5”*0.062”, Minimum land pad)
©2006 Fairchild Semiconductor Corporation
1
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FKN1N60SA Rev. A
FKN1N60SA TRIAC (Silicon Bidirectional Thyristor)
Electrical Characteristics
Symbol
IDRM IRRM VTM
TC = 25°C unless otherwise noted
Parameter
Repetieive Peak Off-State Current On-State Voltage I
Test Condition
VDRM/VRRM applied TC=25°C, ITM=1.12A Instantaneous measurement T2(+), Gate (+) VD=12V, RL=100Ω T2(+), Gate (-) T2(-), Gate (-) T2(+), Gate (+) VD=12V, RL=100Ω TJ=125°C, VD=1/2VDRM (I, II,III) I, III II VD = 12V, ITM = 200mA VD = 12V, IG = 10mA VDRM = 63% Rated, Tj = 125°C, Exponential Rise T2(+), Gate (-) T2(-), Gate (-) II III I
Min.
Typ.
Max.
Units
0.2 20 3.0
-
100 1.8 2.0 2.0 2.0 5 5 5 15 15 20 -
µA V V V V mA mA mA V mA mA mA V/µs V/µs
VGT
Gate Trigger Voltage
IGT VGD IH IL dv/dt(s) dv/dt(c)
Gate Trigger Current Gate Non-Trigger Voltage Holding Current Latching Current Critical Rate of Rise of Off-State Voltag
II III
Critical-Rate of Rise of Off-State Commutating Voltage (di/dt=-0.7A/uS)
Commutation dv/dt test
Device
FKN1N60SA
Test Condition
1. Junction Temperature TJ=125°C 2. Rate of decay of on-state commutating current (di/dt)C 3. Peak off-state voltage VD = 300V
Commutating voltage and current waveforms (inductive load)
Supply Voltage (di/dt)C Main Current Time
Time
Main Voltage (dv/dt)C
Time VD
2 FKN1N60SA Rev. A
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FKN1N60SA TRIAC (Silicon Bidirectional Thyristor)
Quadrant Definitions for a Triac
T2 Positive + (+) T2 (+) T2
Quadrant II
(-) IGT GATE T1
(+) IGT GATE T1
Quadrant I
IGT (-) T2 (-) T2
+ IGT
Quadrant III
(-) IGT GATE T1
(+) IGT GATE T1
Quadrant IV
T2 Negative
Package Marking and Ordering Information
Device Marking
K1N60SA
Device
FKN1N60SA
Package
TO-92
Packing
Bulk
Tape Width
--
Quantity
--
3 FKN1N60SA Rev. A
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FKN1N60SA TRIAC (Silicon Bidirectional Thyristor)
Typical Performance Characteristics
Figure 1. On-State Characteristics Figure 2. Power Dissipation
PAV[W], Maximum Average Power Dissipation
1.2
ITM[A], On-State Current
1.0
DC
0.8
TJ=125 C
1
o
TJ=25 C
o
180 120
o
o
0.6
90
0.4
o
60
0.2
o
30
o
0.1 0.0
0.5
1.0
1.5
2.0
2.5
0.0 0.0
0.2
0.4
0.6
0.8
1.0
VTM[V], On-State Voltage
IT RMS[A], On-State Current
Figure 3. RMS Current Rating
Figure 4. Typical Gate Trigger Current vs Junction Temperature
6
Maximum Allowable Case Temperature, TC[ C]
o
IGT[mA], Gate Trigger Current
120
30
o o
5
60
110
90
o o
o
4
Q3
3
100
120
180
90
Q2
2
DC
80
Q1
1
70 0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0 -40
0
o
40
80
120
ITRMS[A], On-State Current
TJ[ C], Junction Temperature
Figure5. Typical Gate Voltage vs Junction Temperarure
1.0
Figure6. Typical Latching Currrent vs Junction Temperature
6
VGT[mA], Gate Trigger Voltage
0.9
0.8
VGT[mA], Gate Trigger Voltage
4
0.7
Q3
Q3 Q1
0.6
2
Q2
0.5
Q1
0.4 -40
0
o
40
80
120
0 -40
0
o
40
80
120
TJ[ C], Junction Temperature
TJ[ C], Junction Temperature
4 FKN1N60SA Rev. A
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FKN1N60SA TRIAC (Silicon Bidirectional Thyristor)
Typical Performance Characteristics (Continued)
Figure7. Typical Holding Current vs Junction Temperature
5
Figure8. Junction to Case Thermal Resistance
Junction to Case Thermal Resistance, [ C/W]
50
IH[mA],Holding Current
4
o
40
3
30
Q3
2
Q1
1
20
Q2
10
0 -40
0
o
40
80
120
0 1E-6
1E-5
1E-4
1E-3
0.01
0.1
1
10
100
TJ[ C], Junction Temperature
Time, [S]
5 FKN1N60SA Rev. A
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FKN1N60SA TRIAC (Silicon Bidirectional Thyristor)
Package Di.