UESD3.3ST5G Diodes Datasheet

UESD3.3ST5G Datasheet, PDF, Equivalent


Part Number

UESD3.3ST5G

Description

ESD Protection Diodes

Manufacture

ON Semiconductor

Total Page 4 Pages
Datasheet
Download UESD3.3ST5G Datasheet


UESD3.3ST5G
mESD3.3ST5G SERIES
ESD Protection Diodes
In Ultra Small SOD-723 Package
The mESD Series is designed to protect voltage sensitive
components from ESD. Excellent clamping capability, low leakage,
and fast response time provide best in class protection on designs that
are exposed to ESD. Because of its small size, it is suited for use in
cellular phones, MP3 players, digital cameras and many other portable
applications where board space comes at a premium.
Specification Features:
ăSmall Body Outline Dimensions:
0.055x 0.024(1.40 mm x 0.60 mm)
ăLow Body Height: 0.020(0.5 mm)
ăStand-off Voltage: 3.3 V - 12 V
ăLow Leakage
ăResponse Time is Typically < 1 ns
ăESD Rating of Class 3 (> 16 kV) per Human Body Model
ăIEC61000-4-2 Level 4 ESD Protection
ăIEC61000-4-4 Level 4 EFT Protection
ăThese are Pb-Free Devices
Mechanical Characteristics:
CASE: Void‐free, transfer‐molded, thermosetting plastic
Epoxy Meets UL 94 V-0
LEAD FINISH: 100% Matte Sn (Tin)
MOUNTING POSITION: Any
QUALIFIED MAX REFLOW TEMPERATURE: 260°C
Device Meets MSL 1 Requirements
MAXIMUM RATINGS
Rating
Symbol Value Unit
IEC 61000-4-2 (ESD)
Air
Contact
±30 kV
±30
IEC 61000-4-4 (EFT)
40 A
ESD Voltage
Per Human Body Model
Per Machine Model
16 kV
400 V
Total Power Dissipation on FR-5 Board
(Note 1) @ TA = 25°C
Junction and Storage Temperature Range
PD
TJ, Tstg
150
-55 to
+150
mW
°C
Lead Solder Temperature - Maximum
(10 Second Duration)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR-5 = 1.0 x 0.75 x 0.62 in.
http://onsemi.com
12
PIN 1. CATHODE
2. ANODE
MARKING
DIAGRAM
SOD-723
CASE 509AA
XX MG
G
XX = Specific Device Code
M = Date Code
G = Pb-Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
mESDxxST5G
SOD-723 8000/Tape & Reel
(Pb-Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the table on page 2 of this data sheet.
©Ă Semiconductor Components Industries, LLC, 2008
February, 2008 - Rev. 3
1
Publication Order Number:
UESD3.3ST5G/D

UESD3.3ST5G
mESD3.3ST5G SERIES
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
Parameter
IPP
VC
VRWM
IR
VBR
IT
IF
VF
Ppk
C
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Forward Current
Forward Voltage @ IF
Peak Power Dissipation
Max. Capacitance @VR = 0 and f = 1 MHz
I
IF
VC VBR VRWM
IIRT VF
IPP
Uni-Directional TVS
V
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.1 V Max. @ IF = 10 mA for all types)
Device*
IR (mA) @ VBR (V) @ IT
VC (V)
Ppk
Device VRWM (V)
VRWM
(Note 2)
IT @ Max IPPIPP (A)(W)
Marking
Max
Max
Min mA Max Max Max
mESD3.3ST5G
E0 3.3
2.5
5.0 1.0 10.9 10.4 113
mESD5.0ST5G
E2 5.0
1.0
6.2 1.0 13.3 8.8 117
mESD12ST5G
E3 12
1.0
13.5 1.0 23.7 5.4 128
*Other voltages available upon request.
†Surge current waveform per Figure 1.
2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.
C (pF)
Typ
80
65
30
100
tr
90
80
70
60
50
40
30
20
10
0
0
tP
PEAK VALUE IRSM @ 8 ms
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
HALF VALUE IRSM/2 @ 20 ms
20 40
t, TIME (ms)
60
80
Figure 1. 8 x 20 ms Pulse Waveform
http://onsemi.com
2


Features www.DataSheet4U.com mESD3.3ST5G SERIES Product Preview ESD Protection Diodes I n Ultra Small SOD−723 Package The mES D Series is designed to protect voltage sensitive components from ESD. Excelle nt clamping capability, low leakage, an d fast response time provide best in cl ass protection on designs that are expo sed to ESD. Because of its small size, it is suited for use in cellular phones , MP3 players, digital cameras and many other portable applications where boar d space comes at a premium. Specificati on Features: http://onsemi.com 1 PIN 1. CATHODE 2. ANODE 2 • Small Body Out line Dimensions: • • • • • • • 0.055″ x 0.024″ (1.40 mm x 0.60 mm) Low Body Height: 0.020″ ( 0.5 mm) Stand−off Voltage: 3.3 V − 12 V Low Leakage Response Time is Typic ally < 1 ns ESD Rating of Class 3 (> 16 kV) per Human Body Model IEC61000−4 2 Level 4 ESD Protection IEC61000−4 −4 Level 4 EFT Protection These are P b−Free Devices MARKING DIAGRAM L0 M SOD−723 CASE 509AA L0 M = Specific Device Code = Date Code Me.
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