PG03DBVSC Diode Datasheet

PG03DBVSC Datasheet, PDF, Equivalent


Part Number

PG03DBVSC

Description

TVS Diode

Manufacture

KEC semiconductor

Total Page 1 Pages
Datasheet
Download PG03DBVSC Datasheet


PG03DBVSC
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SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
PG03DBVSC
TVS Diode for ESD
Protection in Portable Electronics
FEATURES
50 Watts peak pulse power (tp=8/20 s)
Transient protection for data lines to
IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact)
IEC 61000-4-4(EFT) 40A(tp=5/50ns)
IEC 61000-4-5(Lightning) 5A(tp=8/20 s)
Bidirectional Type Pin Configuration Structure.
Small package for use in portable electronics.
Suitable replacement for Multi-Layer Varistors in ESD protection applications.
Protects one I/O or power line.
Low clamping voltage.
Low leakage current.
APPLICATIONS
Cell phone handsets and accessories.
Microprocessor based equipment.
Personal digital assistants (PDA’s)
Notebooks, desktops, & servers.
Portable instrumentation.
Pagers peripherals.
CATHODE MARK
21
B
DIM MILLIMETERS
A A 1.4Ź0.05
B 1.0Ź0.05
C 0.6Ź0.05
D 0.28Ź0.03
E 0.5Ź0.05
F 0.12Ź0.03
1. ANODE
2. ANODE
VSC
Marking
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Junction Temperature
Storage Temperature
Tj
Tstg
RATING
-55 150
-55 150
UNIT
21
3B
21
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Stand-Off Voltage
Zener Voltage
Reverse Leakage Current
VRWM
VZ
IR
Junction Capacitance
CJ
TEST CONDITION
-
It=1mA
VRWM=3.3V
VR=0V, f=1MHz
MIN.
-
4.2
-
-
TYP.
-
-
-
-
MAX.
3.3
6.2
20
25
UNIT
V
V
A
pF
2005. 6. 1
Revision No : 0
1/1


Features www.DataSheet4U.com SEMICONDUCTOR TECHN ICAL DATA Protection in Portable Electr onics Applications. PG03DBVSC TVS Diod e for ESD Protection in Portable Electr onics FEATURES 50 Watts peak pulse pow er (tp=8/20 s) Transient protection for data lines to IEC 61000-4-2(ESD) 15kV( Air), 8kV(Contact) IEC 61000-4-4(EFT) 4 0A(tp=5/50ns) IEC 61000-4-5(Lightning) 5A(tp=8/20 s) Bidirectional Type Pin Co nfiguration Structure. Small package fo r use in portable electronics. Suitable replacement for Multi-Layer Varistors in ESD protection applications. Protect s one I/O or power line. 2 CATHODE MAR K 1 D C B A DIM A B C D E F E MIL LIMETERS 1.4Ź0.05 1.0Ź0.05 0.6Ź0.05 0.28Ź0.03 0.5Ź0.05 0.12Ź0.03 Low cl amping voltage. Low leakage current. 1. ANODE 2. ANODE F APPLICATIONS Cell p hone handsets and accessories. Micropro cessor based equipment. Personal digita l assistants (PDA’s) Notebooks, deskt ops, & servers. Portable instrumentatio n. Pagers peripherals. VSC Marking 2 SYMBOL Tj Tstg RATING -55 150 -5.
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