PG05DBVSC

www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA Protection in Portable Electronics Applications. PG05DBVSC TVS Diode for ESD Protection in Portable Electronics FEATURES 50 Watts peak pulse power (tp=8/20 s) Transient protection for data lines to IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact) IEC 61000-4-4(EFT) 40A(tp=5/50ns) IEC 61000-4-5(Lightning) 5A(tp=8/20 s) Bidirectional Type Pin Configuration Structure. Small package for use in portable electronics. Suitable replacement for Multi-Layer Varistors in ESD protection applications. Protects one I/O or power line. 2 CATHODE MARK 1 D C B A DIM A B C D E F E MILLIMETERS 1.4Ź0.05 1.0Ź0.05 0.6Ź0.05 0.28Ź0.03 0.5Ź0.05 0.12Ź0.03 Low clamping voltage. Low leakage current. 1. ANODE 2. ANODE F APPLICATIONS Cell phone handsets and accessories. Microprocessor based equipment. Personal digital assistants (PDA’s) Notebooks, desktops, & servers. Portable instrumentation. Pagers peripherals. VSC Marking MAXIMUM RATING (Ta=25 CHARACTERISTIC Peak Pulse Power (tp=8/20 s) Junction Temperature Storage Temperature ) SYMBOL PPK Tj Tstg RATING 50 -55 150 -55 150 2 1 UNIT 2 5B 1 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Junction Capacitance ) TEST CONDITION It=1mA VRWM=5V VR=0V, f=1MHz MIN. 5.8 TYP. MAX. 5 7.8 5 60 UNIT V V A pF SYMBOL VRWM VBR IR CJ 2005. 6. 8 Revision No : 1 1/1 www.DataSheet4U.com PG05DBVSC NON-REPETITIVE PEAK PULSE POWER...