2SA1576ART1

www.DataSheet4U.com 2SA1576ART1 General Purpose Amplifier Transistors PNP Surface Mount Moisture Sensitivity Level: 1 MAXIMUM RATINGS (TA = 25°C) Rating Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC IC(P) Value 60 50 7.0 100 200 Unit Vdc Vdc Vdc mAdc mAdc 1 BASE 2 EMITTER COLLECTOR 3 http://onsemi.com THERMAL CHARACTERISTICS Characteristic Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 200 150 −55 to +150 Unit mW °C °C 1 2 SC−70 CASE 419 76 M = Specific Device Code = Date Code 76 M 3 MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Collector−Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector−Base Cutoff Current (VCB = 60 Vdc, IE = 0) Collector−Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0, TA = 80°C) DC Current Gain (Note 1) (VCE = 6.0 Vdc, IC = 2.0 mAdc) Collector−Emitter Saturation Vo...