2SC5752 TRANSISTOR Datasheet

2SC5752 Datasheet, PDF, Equivalent


Part Number

2SC5752

Description

NPN SILICON RF TRANSISTOR

Manufacture

NEC

Total Page 20 Pages
Datasheet
Download 2SC5752 Datasheet


2SC5752
www.DataSheet4U.com
DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5752
NPN SILICON RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (60 mW)
4-PIN SUPER MINIMOLD
FEATURES
• Ideal for medium output power amplification
• PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm
• HFT3 technology (fT = 12 GHz) adopted
• High reliability through use of gold electrodes
• 4-pin super minimold package
ORDERING INFORMATION
Part Number
2SC5752
2SC5752-T1
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 3 (Base), Pin 4 (Emitter) face the perforation side of the tape
Remark To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
P Note
tot
Tj
Tstg
Ratings
9.0
6.0
2.0
100
200
150
65 to +150
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
Unit
V
V
V
mA
mW
°C
°C
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P15658EJ1V0DS00 (1st edition)
Date Published August 2001 NS CP(K)
Printed in Japan
©
2001

2SC5752
2SC5752
THERMAL RESISTANCE
Parameter
Junction to Ambient Resistance
Symbol
R Note
th j-a
Value
610
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
Symbol
Test Conditions
DC Characteristics
Collector Cut-off Current
ICBO VCB = 5 V, IE = 0 mA
Emitter Cut-off Current
DC Current Gain
IEBO
h Note 1
FE
VBE = 1 V, IC = 0 mA
VCE = 3 V, IC = 30 mA
RF Characteristics
Gain Bandwidth Product
fT VCE = 3 V, IC = 30 mA, f = 2 GHz
Insertion Power Gain
S21e2 VCE = 3 V, IC = 30 mA, f = 2 GHz
Noise Figure
NF VCE = 3 V, IC = 7 mA, f = 2 GHz,
ZS = Zopt
Reverse Transfer Capacitance
C Note 2
re
VCB = 3 V, IE = 0 mA, f = 1 MHz
Maximum Available Power Gain
MAG Note3 VCE = 3 V, IC = 30 mA, f = 2 GHz
Linear Gain
GL VCE = 2.8 V, ICq = 10 mA, f = 1.8 GHz,
Pin = 5 dBm
Gain 1 dB Compression Output Power PO (1 dB) VCE = 2.8 V, ICq = 10 mA, f = 1.8 GHz,
Pin = 7 dBm
Collector Efficiency
ηC VCE = 2.8 V, ICq = 10 mA, f = 1.8 GHz,
Pin = 7 dBm
MIN.
75
8.0
TYP.
120
12.0
10.0
1.7
0.46
13.0
12.5
18.0
55
MAX.
100
100
150
2.5
0.7
Unit
nA
nA
GHz
dB
dB
pF
dB
dB
dBm
%
Notes 1. Pulse measurement: PW 350 µs, Duty Cycle 2%
2. Collector to base capacitance when the emitter grounded
3. MAG = S21 (K – (K2 – 1) )
S12
hFE CLASSIFICATION
Rank
Marking
hFE Value
FB
R55
75 to 150
2 Data Sheet P15658EJ1V0DS


Features www.DataSheet4U.com DATA SHEET NPN SIL ICON RF TRANSISTOR 2SC5752 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIM OLD FEATURES • Ideal for medium outpu t power amplification • PO (1 dB) = 1 8.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz , Pin = 7 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability t hrough use of gold electrodes • 4-pin super minimold package ORDERING INFOR MATION Part Number 2SC5752 2SC5752-T1 Q uantity 50 pcs (Non reel) 3 kpcs/reel S upplying Form • 8 mm wide embossed ta ping • Pin 3 (Base), Pin 4 (Emitter) face the perforation side of the tape Remark To order evaluation samples, con sult your NEC sales representative. Uni t sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltag e Collector Current Total Power Dissipa tion Junction Temperature Storage Tempe rature Symbol VCBO VCEO VEBO IC Ptot Note Ratings 9.0 6.0 2.0 100 200 150 −65.
Keywords 2SC5752, datasheet, pdf, NEC, NPN, SILICON, RF, TRANSISTOR, SC5752, C5752, 5752, 2SC575, 2SC57, 2SC5, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)