2SC5752

www.DataSheet4U.com DATA SHEET NPN SILICON RF TRANSISTOR 2SC5752 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD FEATURES Ideal for medium output power amplification PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm HFT3 technology (fT = 12 GHz) adopted High reliability through use of gold electrodes 4-pin super minimold package ORDERING INFORMATION Part Number 2SC5752 2SC5752-T1 Quantity 50 pcs (Non reel) 3 kpcs/reel Supplying Form 8 mm wide embossed taping Pin 3 (Base), Pin 4 (Emitter) face the perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Ptot Note Ratings 9.0 6.0 2.0 100 200 150 −65 to +150 Unit V V V mA mW °C °C Tj Tstg 2 Note Mounted on 1.08 cm × 1.0 mm (t) glass epoxy PCB Because this product uses high-frequency technology, avoid excessive static electricity, etc. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P15658EJ1...