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DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5752
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD
FEATURES
• Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of gold electrodes • 4-pin super minimold package
ORDERING INFORMATION
Part Number 2SC5752 2SC5752-T1 Quantity 50 pcs (Non reel) 3 kpcs/reel Supplying Form • 8 mm wide embossed taping • Pin 3 (Base), Pin 4 (Emitter) face the perforation side of the tape
Remark To order evaluation samples, consult your NEC sales representative. Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Ptot
Note
Ratings 9.0 6.0 2.0 100 200 150 −65 to +150
Unit V V V mA mW °C °C
Tj Tstg
2 Note Mounted on 1.08 cm × 1.0 mm (t) glass epoxy PCB
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. P15658EJ1V0DS00 (1st edition) Date Published August 2001 NS CP(K) Printed in Japan
©
2001
2SC5752
THERMAL RESISTANCE
Parameter Junction to Ambient Resistance Symbol Rth j-a
Note
Value 610
Unit °C/W
2 Note Mounted on 1.08 cm × 1.0 mm (t) glass epoxy PCB
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Gain Bandwidth Product Insertion Power Gain Noise Figure Reverse Transfer Capacitance Maximum Available Power Gain Linear Gain Gain 1 dB Compression Output Power Collector Efficiency fT S21e NF Cre
Note 2 2
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
ICBO IEBO hFE
Note 1
VCB = 5 V, IE = 0 mA VBE = 1 V, IC = 0 mA VCE = 3 V, IC = 30 mA
− − 75
− − 120
100 100 150
nA nA −
VCE = 3 V, IC = 30 mA, f = 2 GHz VCE = 3 V, IC = 30 mA, f = 2 GHz VCE = 3 V, IC = 7 mA, f = 2 GHz, ZS = Zopt VCB = 3 V, IE = 0 mA, f = 1 MHz VCE = 3 V, IC = 30 mA, f = 2 GHz VCE = 2.8 V, ICq = 10 mA, f = 1.8 GHz, Pin = −5 dBm VCE = 2.8 V, ICq = 10 mA, f = 1.8 GHz, Pin = 7 dBm VCE = 2.8 V, ICq = 10 mA, f = 1.8 GHz, Pin = 7 dBm
− 8.0 − − − − − −
12.0 10.0 1.7 0.46 13.0 12.5 18.0 55
− − 2.5 0.7 − − − −
GHz dB dB pF dB dB dBm %
MAG
Note 3
GL PO (1 dB)
ηC
Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded 3. MAG = S21 (K – √ (K2 – 1) ) S12
hFE CLASSIFICATION
Rank Marking hFE Value FB R55 75 to 150
2
Data Sheet P15658EJ1V0DS
2SC57.