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2SC5752 Dataheets PDF



Part Number 2SC5752
Manufacturers NEC
Logo NEC
Description NPN SILICON RF TRANSISTOR
Datasheet 2SC5752 Datasheet2SC5752 Datasheet (PDF)

www.DataSheet4U.com DATA SHEET NPN SILICON RF TRANSISTOR 2SC5752 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of gold electrodes • 4-pin super minimold package ORDERING INFORMATION Part Number 2SC5752 2SC5752-T1 Quantity 50 pcs (Non reel) 3 kpcs/reel Sup.

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www.DataSheet4U.com DATA SHEET NPN SILICON RF TRANSISTOR 2SC5752 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of gold electrodes • 4-pin super minimold package ORDERING INFORMATION Part Number 2SC5752 2SC5752-T1 Quantity 50 pcs (Non reel) 3 kpcs/reel Supplying Form • 8 mm wide embossed taping • Pin 3 (Base), Pin 4 (Emitter) face the perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Ptot Note Ratings 9.0 6.0 2.0 100 200 150 −65 to +150 Unit V V V mA mW °C °C Tj Tstg 2 Note Mounted on 1.08 cm × 1.0 mm (t) glass epoxy PCB Because this product uses high-frequency technology, avoid excessive static electricity, etc. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P15658EJ1V0DS00 (1st edition) Date Published August 2001 NS CP(K) Printed in Japan © 2001 2SC5752 THERMAL RESISTANCE Parameter Junction to Ambient Resistance Symbol Rth j-a Note Value 610 Unit °C/W 2 Note Mounted on 1.08 cm × 1.0 mm (t) glass epoxy PCB ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Gain Bandwidth Product Insertion Power Gain Noise Figure Reverse Transfer Capacitance Maximum Available Power Gain Linear Gain Gain 1 dB Compression Output Power Collector Efficiency fT S21e NF Cre Note 2 2 Symbol Test Conditions MIN. TYP. MAX. Unit ICBO IEBO hFE Note 1 VCB = 5 V, IE = 0 mA VBE = 1 V, IC = 0 mA VCE = 3 V, IC = 30 mA − − 75 − − 120 100 100 150 nA nA − VCE = 3 V, IC = 30 mA, f = 2 GHz VCE = 3 V, IC = 30 mA, f = 2 GHz VCE = 3 V, IC = 7 mA, f = 2 GHz, ZS = Zopt VCB = 3 V, IE = 0 mA, f = 1 MHz VCE = 3 V, IC = 30 mA, f = 2 GHz VCE = 2.8 V, ICq = 10 mA, f = 1.8 GHz, Pin = −5 dBm VCE = 2.8 V, ICq = 10 mA, f = 1.8 GHz, Pin = 7 dBm VCE = 2.8 V, ICq = 10 mA, f = 1.8 GHz, Pin = 7 dBm − 8.0 − − − − − − 12.0 10.0 1.7 0.46 13.0 12.5 18.0 55 − − 2.5 0.7 − − − − GHz dB dB pF dB dB dBm % MAG Note 3 GL PO (1 dB) ηC Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded 3. MAG = S21 (K – √ (K2 – 1) ) S12 hFE CLASSIFICATION Rank Marking hFE Value FB R55 75 to 150 2 Data Sheet P15658EJ1V0DS 2SC5752 TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Total Power Dissipation Ptot (mW) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Reverse Transfer Capacitance Cre (pF) 300 250 200 150 100 50 Mounted on Glass Epoxy PCB (1.08 cm2 × 1.0 mm (t) ) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 1 2 3 4 5 6 f = 1 MHz 0 25 50 75 100 125 150 Ambient Temperature TA (˚C) Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 10 1 0.1 0.01 0.001 VCE = 3 V Collector Current IC (mA) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 100 90 700 µ A 600 µ A 500 µ A 400 µ A 300 µ A 200 µ A IB = 100 µ A 2 4 6 8 Collector Current IC (mA) 80 70 60 50 40 30 20 10 0.0001 0.5 0.6 0.7 0.8 0.9 1.0 0 Base to Emitter Voltage VBE (V) Collector to Emitter Voltage VCE (V) DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 VCE = 3 V DC Current Gain hFE 100 10 0.1 1 10 100 Collector Current IC (mA) Data Sheet P15658EJ1V0DS 3 2SC5752 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 35 30 MSG 25 20 15 10 5 0 0.1 1 Frequency f (GHz) 10 |S21e|2 MAG VCE = 3 V IC = 30 mA 15 Gain Bandwidth Product fT (GHz) VCE = 3 V f = 2 GHz 10 5 0 1 10 Collector Current IC (mA) 100 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 25 VCE = 3 V f = 1 GHz 20 MSG MAG 25 VCE = 3 V f = 2 GHz 20 15 MSG 15 |S21e|2 MAG 10 10 |S21e|2 5 5 0 1 10 Collector Current IC (mA) 100 0 1 10 Collector Current IC (mA) 100 INSERTION POWER GAIN, MAG vs. COLLECTOR CURRENT Inse.


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