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HAT2195R
Silicon N Channel Power MOS FET Power Switching
REJ03G0060-0300Z Rev.3.00 Apr.01.2004
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.6 mΩ typ. (at VGS = 10 V)
Outline
SOP-8
5 6 7 8 D D D D 5 7 6
8
4 G 3 1 2 4
1, 2, 3 Source 4 Gate 5, ...
