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RN2970FE,RN2971FE
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-...
www.DataSheet4U.com
RN2970FE,RN2971FE
TOSHIBA
Transistor Silicon
PNP Epitaxial Type (PCT process) (Bias Resistor built-in
Transistor)
RN2970FE, RN2971FE
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.
Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. Incorporating a bias resistor into a
transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. Complementary to RN1970FE, RN1971FE
Equivalent Circuit and Bias Resistor Values
C
R1 B
E
Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PC (Note) Tj Tstg Rating −50 −50 −5 −100 100 150 −55~150 Unit V V V mA mW °C °C 1 2 3 Q1 Q2 6 5 4
Equivalent Circuit
(top view)
Note: Total rating
000707EAA1
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human ...