MCH3319

www.DataSheet4U.com Ordering number : ENN7199 MCH3319 P-Channel Silicon MOSFET MCH3319 Ultrahigh-Speed Switching Applications Features Package Dimensions unit : mm 2167A [MCH3319] 0.25 Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. 0.3 0.15 3 2.1 1.6 0.25 0.65 2.0 (Bottom view) 0.07 2 1 3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 1 : Gate 2 : Source 3 : Drain 1 2 (Top view) 0.85 SANYO : MCPH3 Unit --12 ±8 --2.6 -10.4 1.0 150 --55 to +150 V V A A W °C °C Ratings Mounted on a ceramic board (900mm2!0.8mm) Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Conditions ID=-1mA, VGS=0 VDS=--12V, VGS=0 VGS=± 6.4V, VDS=0 VDS=--6V, ID=--1mA VDS=--6V, ID=-1.3A ID=-1.3A, VGS=--4.5V ID=-0.7A, VGS=--2.5V ID=-0.3A, VGS=--1.8V Ratings min --12 --10 ± 10 --0.3 2.9 4.2 75 110 150 98 155 255 --1.0 typ max Unit V µA µA V S mΩ mΩ mΩ Marking : JU Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applic...