N-Channel MOSFET. 2SK3453 Datasheet

2SK3453 MOSFET. Datasheet pdf. Equivalent


Toshiba Semiconductor 2SK3453
www.DataSheet4U.com
2SK3453
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3453
Switching Regulator Applications
Unit: mm
· Low drain-source ON resistance: RDS (ON) = 0.72 (typ.)
· High forward transfer admittance: |Yfs| = 7.0 S (typ.)
· Low leakage current: IDSS = 100 µA (max) (VDS = 700 V)
· Enhancement-model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kW)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAR
IAR
EAR
Tch
Tstg
Rating
700
700
±30
10
30
80
420
10
8
150
-55~150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
TOSHIBA
2-16F1B
Weight: 5.8 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
1.56
41.6
°C/W
°C/W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 7.5 mH, RG = 25 W, IAR = 10 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device. Please handle with caution.
1 2002-09-02


2SK3453 Datasheet
Recommendation 2SK3453 Datasheet
Part 2SK3453
Description N-Channel MOSFET
Feature 2SK3453; www.DataSheet4U.com 2SK3453 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2S.
Manufacture Toshiba Semiconductor
Datasheet
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Toshiba Semiconductor 2SK3453
2SK3453
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain-source breakdown voltage
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-ON time
Fall time
Turn-OFF time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Symbol
Test Condition
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
ïYfsï
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
IG = ±10 mA, VDS = 0 V
VDS = 700 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 5 A
VDS = 10 V, ID = 5 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
Min Typ. Max Unit
¾ ¾ ±10
±30 ¾
¾
¾ ¾ 100
700 ¾
¾
2.0 ¾ 4.0
¾ 0.72 1.0
4.0 7.0 ¾
¾ 1700 ¾
¾ 40 ¾
¾ 200 ¾
mA
V
mA
V
V
W
S
pF
tr VG1S0 V
0V
ton
ID = 5 A VOUT
¾ 40 ¾
¾ 72 ¾
RL = 40 W
ns
tf VDD ~- 200 V ¾ 42 ¾
Duty <= 1%, tw = 10 ms
toff ¾ 145 ¾
Qg
Qgs VDD ~- 400 V, VGS = 10 V, ID = 10 A
Qgd
¾ 53 ¾
¾ 25 ¾ nC
¾ 28 ¾
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
¾
¾
IDR = 10 A, VGS = 0 V
IDR = 10 A, VGS = 0 V,
dIDR/dt = 100 A/ms
Min Typ. Max Unit
¾ ¾ 10 A
¾ ¾ 30 A
¾ ¾ -1.9 V
¾ 1400 ¾
ns
¾ 17.5 ¾
mC
Marking
TOSHIBA
K3453
Type
Lot Number
Month (starting from alphabet A)
Year (last number of the christian era)
2 2002-09-02



Toshiba Semiconductor 2SK3453
ID - VDS
10
Common source
Tc = 25°C
10
8 Pulse test
6
8 5.2
65
4.8
4
4.6
2
VGS = 4 V
0
0 2 4 6 8 10
Drain-source voltage VDS (V)
2SK3453
ID - VDS
20
10 Common source
8 Tc = 25°C
16 6 Pulse test
5.6
12
5.2
8
4 4.6
VGS = 4 V
0
0 10 20 30 40 50
Drain-source voltage VDS (V)
ID - VGS
20
Common source
VDS = 20 V
16 Pulse test
25
12
8
100
4
Tc = -55°C
0
02468
Gate-source voltage VGS (V)
10
VDS - VGS
20
Common source
Tc = 25°C
16 Pulse test
12
ID = 10 A
8
45
2.5
0
0 4 8 12 16 20
Gate-source voltage VGS (V)
50
Common source
30 VDS = 20 V
Pulse test
ïYfsï - ID
10
Tc = -55°C
5
3
100 25
1
0.5
0.3
0.1
0.1
0.3 0.5 1
3 5 10
Drain current ID (A)
30 50 100
RDS (ON) - ID
50
Common source
30 Tc = 25°C
Pulse test
10
5
3
1 VGS = 10, 15 V
0.5
0.3
0.1
0.1
0.3 0.5 1
3 5 10
Drain current ID (A)
30 50
3 2002-09-02







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