N-Channel MOSFET. 2SK3473 Datasheet

2SK3473 MOSFET. Datasheet pdf. Equivalent


Toshiba Semiconductor 2SK3473
www.DataSheet4U.com
2SK3473
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)
2SK3473
Switching Regulator Applications
Unit: mm
Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.)
High forward transfer admittance: |Yfs| = 6.5S (typ.)
Low leakage current: IDSS = 100 μA (VDS = 720 V)
Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 k)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
900
900
±30
9
27
150
413
9
15
150
-55~150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
SC-65
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
0.833
50
°C/W
°C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 9.35 mH, IAR = 9 A, RG = 25
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1 2003-07-16


2SK3473 Datasheet
Recommendation 2SK3473 Datasheet
Part 2SK3473
Description N-Channel MOSFET
Feature 2SK3473; www.DataSheet4U.com 2SK3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) 2.
Manufacture Toshiba Semiconductor
Datasheet
Download 2SK3473 Datasheet




Toshiba Semiconductor 2SK3473
Electrical Characteristics (Ta = 25°C)
2SK3473
Characteristics
Gate leakage current
Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
VGS = ±25 V, VDS = 0 V
  ±10
V (BR) GSS ID = ±10 µA, VGS = 0 V
±30
IDSS
VDS = 900 V, VGS = 0 V
  100
V (BR) DSS ID = 10 mA, VGS = 0 V
900
Vth VDS = 10 V, ID = 1 mA
2.0 4.0
RDS (ON) VGS = 10 V, ID = 4 A
1.3 1.6
Yfs
VDS = 15 V, ID = 4 A
3.0 6.5
Ciss
Crss
VDS = 25 V, VGS = 0 V, f = 1 MHz
1450
30
Coss
155
tr
10 V
VGS
ID = 4 A VOUT
30
0V
ton
4.7
RL =
55
100
tf 12
VDD ∼− 400 V
toff Duty <= 1%, tw = 10 µs
75
µA
V
µA
V
V
S
pF
ns
Qg
Qgs VDD ∼− 400 V, VGS = 10 V, ID = 9 A
Qgd
38
22 nC
16
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 9 A, VGS = 0 V
IDR = 9 A, VGS = 0 V,
dIDR/dt = 100 A/µs
Min Typ. Max Unit
 9 A
  27 A
  −1.7 V
1350
ns
15  µC
Marking
TOSHIBA
K3473
Type
Lot Number
Month (starting from alphabet A)
Year (last number of the christian era)
2 2003-07-16



Toshiba Semiconductor 2SK3473
2SK3473
RESTRICTIONS ON PRODUCT USE
000707EAA
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
3 2003-07-16







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