HEXFET Power MOSFET
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PD - 95264A
IRF7811APbF
Applications High Frequency Synchronous Buck Converters for Computer Proce...
Description
www.DataSheet4U.com
PD - 95264A
IRF7811APbF
Applications High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l 100% RG Tested l Lead-Free
l
S S
HEXFET® Power MOSFET
VDSS
28V
RDS(on) max
12mΩ
Qg
17nC
1
8 7
A A D D D D
2
Benefits
l l l
S G
3
6
Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current
4
5
Top View
SO-8
Absolute Maximum Ratings
Symbol
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation
f f
c
f 9.1 f
11 91 2.5 1.6 0.02 ±12 -55 to + 150 300 (1.6mm from case)
Max
Units
A
W W/°C V °C
Linear Derating Factor Gate-to-Source Voltage Operating Junction and Storage Temperature Range Smoldering Temperature, for 10 seconds
Thermal Resistance
Symbol
RθJL RθJA
g Junction-to-Ambient fg
Junction-to-Drain Lead
Parameter
Typ
––– –––
Max
20 50
Units
°C/W
Notes through
are on page 10
www.irf.com
1
1/11/05
IRF7811APbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
BV DSS ∆Β V DSS/∆ T J RDS(on) VGS(th) ∆ V GS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss
Parameter
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistan...
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