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IRGP4063DPBF Dataheets PDF



Part Number IRGP4063DPBF
Manufacturers International Rectifier
Logo International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet IRGP4063DPBF DatasheetIRGP4063DPBF Datasheet (PDF)

IRGP4063DPbF IRGP4063D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 μS short circuit SOA • Square RBSOA • 100% of the parts tested for 4X rated current (ILM) • Positive VCE (ON) Temperature co-efficient • Ultra fast soft Recovery Co-Pak Diode • Tight parameter distribution • Lead Free Package C G E n-channel VCES = 600V IC = 48A, TC = 100°C tSC ≥ 5μs, .

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IRGP4063DPbF IRGP4063D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 μS short circuit SOA • Square RBSOA • 100% of the parts tested for 4X rated current (ILM) • Positive VCE (ON) Temperature co-efficient • Ultra fast soft Recovery Co-Pak Diode • Tight parameter distribution • Lead Free Package C G E n-channel VCES = 600V IC = 48A, TC = 100°C tSC ≥ 5μs, TJ(max) = 175°C VCE(on) typ. = 1.65V Benefits • High Efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses • Rugged transient Performance for increased reliability • Excellent Current sharing in parallel operation • Low EMI C E GC IRGP4063DPbF G E C G IRGP4063D-EPbF G Gate C Collector E Emitter Absolute Maximum Ratings VCES Parameter Collector-to-Emitter Voltage IC @ TC = 25°C IC @ TC = 100°C ICM ILM Continuous Collector Current Continuous Collector Current Pulse Collector Current cClamped Inductive Load Current IF @ TC = 25°C IF @ TC = 100°C IF M Diode Continous Forward Current Diode Continous Forward Current eDiode Maximum Forward Current VGE Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage PD @ TC = 25°C PD @ TC = 100°C Maximum Power Dissipation Maximum Power Dissipation TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Thermal Resistance Parameter RθJC (IGBT) RθJC (Diode) RθCS RθJA Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance Junction-to-Case-(each Diode) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) Max. 600 96 48 200 192 96 48 192 ±20 ±30 330 170 -55 to +175 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) Min. ––– ––– ––– ––– Typ. ––– ––– 0.24 ––– Max. 0.45 0.92 ––– 40 Units V A V W °C Units °C/W 1 www.irf.com © 2013 International Rectifier March 15, 2013 IRGP4063DPbF/IRGP4063D-EPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES Parameter Collector-to-Emitter Breakdown Voltage Min. Typ. Max. Units Conditions f600 — — V VGE = 0V, IC = 150μA ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage — 0.30 — V/°C VGE = 0V, IC = 1mA (25°C-175°C) — 1.65 2.14 IC = 48A, VGE = 15V, TJ = 25°C VCE(on) Collector-to-Emitter Saturation Voltage — 2.0 — V IC = 48A, VGE = 15V, TJ = 150°C — 2.05 — IC = 48A, VGE = 15V, TJ = 175°C VGE(th) Gate Threshold Voltage 4.0 — 6.5 V VCE = VGE, IC = 1.4mA ΔVGE(th)/ΔTJ Threshold Voltage temp. coefficient — -21 — mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C) gfe Forward Transconductance — 32 — S VCE = 50V, IC = 48A, PW = 80μs ICES Collector-to-Emitter Leakage Current — 1.0 150 μA VGE = 0V, VCE = 600V — 450 1000 VGE = 0V, VCE = 600V, TJ = 175°C VFM Diode Forward Voltage Drop — 1.95 2.91 V IF = 48A — 1.45 — IF = 48A, TJ = 175°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Ref.Fig CT6 CT6 5,6,7 9,10,11 9, 10, 11, 12 8 Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig Qg Total Gate Charge (turn-on) — 95 140 IC = 48A 24 Qge Gate-to-Emitter Charge (turn-on) — 28 42 nC VGE = 15V CT1 Qgc Gate-to-Collector Charge (turn-on) — 35 53 VCC = 400V Eon Turn-On Switching Loss — 625 1141 IC = 48A, VCC = 400V, VGE = 15V CT4 Eoff Turn-Off Switching Loss — 1275 1481 μJ RG = 10Ω, L = 200μH, LS = 150nH, TJ = 25°C Etotal Total Switching Loss — 1900 2622 Energy losses include tail & diode reverse recovery td(on) Turn-On delay time — 60 78 IC = 48A, VCC = 400V, VGE = 15V CT4 tr Rise time — 40 56 ns RG = 10Ω, L = 200μH, LS = 150nH, TJ = 25°C td(off) Turn-Off delay time — 145 176 tf Fall time — 35 46 Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss — 1625 — — 1585 — IC = 48A, VCC = 400V, VGE=15V fÃμJ RG=10Ω, L=200μH, LS=150nH, TJ = 175°C 13, 15 CT4 Etotal Total Switching Loss — 3210 — Energy losses include tail & diode reverse recovery WF1, WF2 td(on) Turn-On delay time — 55 — IC = 48A, VCC = 400V, VGE = 15V 14, 16 tr Rise time — 45 — ns RG = 10Ω, L = 200μH, LS = 150nH CT4 td(off) Turn-Off delay time — 165 — TJ = 175°C WF1 tf Fall time — 45 — WF2 Cies Input Capacitance — 3025 — pF VGE = 0V 23 Coes Output Capacitance — 245 — VCC = 30V Cres Reverse Transfer Capacitance — 90 — f = 1.0Mhz TJ = 175°C, IC = 192A 4 RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp =600V CT2 Rg = 10Ω, VGE = +15V to 0V SCSOA Short Circuit Safe Operating Area 5 — — μs VCC = 400V, Vp =600V 22, CT3 Rg = 10Ω, VGE = +15V to 0V WF4 Erec Reverse Recovery Energy of the Diode — 845 — μJ TJ = 175°C 17, 18, 19 trr Diode Reverse Recovery Time — 115 — ns VCC = 400V, IF = 48A 20, 21 Irr Peak Rever.


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