Document
IRGP4063DPbF IRGP4063D-EPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (ON) Trench IGBT Technology • Low switching losses
• Maximum Junction temperature 175 °C
• 5 μS short circuit SOA • Square RBSOA
• 100% of the parts tested for 4X rated current (ILM) • Positive VCE (ON) Temperature co-efficient • Ultra fast soft Recovery Co-Pak Diode
• Tight parameter distribution
• Lead Free Package
C
G E
n-channel
VCES = 600V IC = 48A, TC = 100°C tSC ≥ 5μs, TJ(max) = 175°C VCE(on) typ. = 1.65V
Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation • Low EMI
C E
GC IRGP4063DPbF
G
E C G IRGP4063D-EPbF
G Gate
C Collector
E Emitter
Absolute Maximum Ratings
VCES
Parameter
Collector-to-Emitter Voltage
IC @ TC = 25°C IC @ TC = 100°C ICM ILM
Continuous Collector Current Continuous Collector Current Pulse Collector Current
cClamped Inductive Load Current
IF @ TC = 25°C IF @ TC = 100°C IF M
Diode Continous Forward Current Diode Continous Forward Current
eDiode Maximum Forward Current
VGE Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
PD @ TC = 25°C PD @ TC = 100°C
Maximum Power Dissipation Maximum Power Dissipation
TJ TSTG
Operating Junction and Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
RθJC (IGBT) RθJC (Diode) RθCS RθJA
Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance Junction-to-Case-(each Diode) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount)
Max.
600 96 48 200 192 96 48 192 ±20 ±30 330 170 -55 to +175
300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m)
Min.
––– ––– ––– –––
Typ.
––– ––– 0.24 –––
Max.
0.45 0.92 ––– 40
Units
V
A
V W °C
Units
°C/W
1 www.irf.com © 2013 International Rectifier
March 15, 2013
IRGP4063DPbF/IRGP4063D-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
Parameter
Collector-to-Emitter Breakdown Voltage
Min. Typ. Max. Units Conditions
f600 — — V VGE = 0V, IC = 150μA
ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage
— 0.30 — V/°C VGE = 0V, IC = 1mA (25°C-175°C)
— 1.65 2.14
IC = 48A, VGE = 15V, TJ = 25°C
VCE(on)
Collector-to-Emitter Saturation Voltage
— 2.0 — V IC = 48A, VGE = 15V, TJ = 150°C
— 2.05 —
IC = 48A, VGE = 15V, TJ = 175°C
VGE(th)
Gate Threshold Voltage
4.0 — 6.5 V VCE = VGE, IC = 1.4mA
ΔVGE(th)/ΔTJ Threshold Voltage temp. coefficient
— -21 — mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C)
gfe Forward Transconductance
— 32 — S VCE = 50V, IC = 48A, PW = 80μs
ICES
Collector-to-Emitter Leakage Current
— 1.0 150 μA VGE = 0V, VCE = 600V
— 450 1000
VGE = 0V, VCE = 600V, TJ = 175°C
VFM Diode Forward Voltage Drop
— 1.95 2.91 V IF = 48A
— 1.45 —
IF = 48A, TJ = 175°C
IGES Gate-to-Emitter Leakage Current
— — ±100 nA VGE = ±20V
Ref.Fig CT6 CT6 5,6,7
9,10,11
9, 10, 11, 12
8
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig
Qg Total Gate Charge (turn-on)
— 95 140
IC = 48A
24
Qge Gate-to-Emitter Charge (turn-on)
— 28 42 nC VGE = 15V
CT1
Qgc Gate-to-Collector Charge (turn-on)
— 35 53
VCC = 400V
Eon Turn-On Switching Loss
— 625 1141
IC = 48A, VCC = 400V, VGE = 15V
CT4
Eoff Turn-Off Switching Loss
— 1275 1481 μJ RG = 10Ω, L = 200μH, LS = 150nH, TJ = 25°C
Etotal
Total Switching Loss
— 1900 2622
Energy losses include tail & diode reverse recovery
td(on)
Turn-On delay time
— 60 78
IC = 48A, VCC = 400V, VGE = 15V
CT4
tr Rise time
— 40 56 ns RG = 10Ω, L = 200μH, LS = 150nH, TJ = 25°C
td(off)
Turn-Off delay time
— 145 176
tf Fall time
— 35 46
Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss
— 1625 — — 1585 —
IC = 48A, VCC = 400V, VGE=15V
fÃμJ RG=10Ω, L=200μH, LS=150nH, TJ = 175°C
13, 15 CT4
Etotal
Total Switching Loss
— 3210 —
Energy losses include tail & diode reverse recovery
WF1, WF2
td(on)
Turn-On delay time
— 55 —
IC = 48A, VCC = 400V, VGE = 15V
14, 16
tr Rise time
— 45 — ns RG = 10Ω, L = 200μH, LS = 150nH
CT4
td(off)
Turn-Off delay time
— 165 —
TJ = 175°C
WF1
tf Fall time
— 45 —
WF2
Cies Input Capacitance
— 3025 —
pF VGE = 0V
23
Coes Output Capacitance
— 245 —
VCC = 30V
Cres Reverse Transfer Capacitance
— 90 —
f = 1.0Mhz
TJ = 175°C, IC = 192A
4
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
VCC = 480V, Vp =600V
CT2
Rg = 10Ω, VGE = +15V to 0V
SCSOA
Short Circuit Safe Operating Area
5 — — μs VCC = 400V, Vp =600V
22, CT3
Rg = 10Ω, VGE = +15V to 0V
WF4
Erec
Reverse Recovery Energy of the Diode
— 845 — μJ TJ = 175°C
17, 18, 19
trr Diode Reverse Recovery Time
— 115 — ns VCC = 400V, IF = 48A
20, 21
Irr Peak Rever.