MRF6S27015GNR1

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S27015N Rev. 0, 8/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2000 to 2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications. Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 160 mA, Pout = 3 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 14 dB Drain Efficiency — 22% ACPR @ 5 MHz Offset — - 45 dBc in 3.84 MHz Channel Bandwidth Capable of Handling 5:1 VSWR, @ 28 Vdc, 2600 MHz, 15 Watts CW Output Power Features Characterized with Series Equivalent Large - Signal Impedance Parameters Internally Matched for Ease of Use Qualified Up to a Maximum of 32 VDD Operation Integrated ESD Protection 200°C Capable Plastic Package RoHS Compliant In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. MRF6S27015NR1 MRF6S27015GNR1 2300- 2700 MHz, 3 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 1265 - 08, STYLE 1 TO - 270- 2 PLASTIC MRF6S27015NR1 CASE 1265A - 02, STYLE 1 TO - 270- 2 GULL PLASTIC MRF6S27015GNR1 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS Tstg TJ Value - 0.5, +68 - 0.5, +12 - 65 to +175 200 Un...