RSU002P03

www.DataSheet4U.com RSU002P03 Transistors 4V Drive Pch MOSFET RSU002P03 zStructure Silicon P-channel MOSFET zDimensions (Unit : mm) UMT3 2.0 0.9 0.3 (3) zFeatures 1) Low On-resistance 2) 4V drive 0.2 0.7 1.25 (2) (1) 2.1 0.65 0.65 1.3 0.15 zApplications Switching (1) Source (2) Gate (3) Drain Each lead has same dimensions Abbreviated symbol : WP zPackaging specifications Package Type RSU002P03 Code Basic ordering unit (pieces) Taping T106 3000 zInner circuit (3) (2) ∗1 ∗2 (1) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Source (2) Gate (3) Drain zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature Range of storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Each terminal mounted on a recommended land Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 PD ∗2 Tch Tstg Limits −30 ±20 ±0.25 ±0.5 0.2 150 −55 to +150 Unit V V A A W °C °C zThermal resistance Parameter Channel to ambient ∗ Each terminal mounted on a recommended land Symbol Rth(ch-a) ∗ Limits 625 Unit °C/W Rev.A 0.1Min. 1/4 RSU002P03 Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol Min. IGSS − Gate-source leakage Drain-source breakdown voltage V(BR) DSS −30 Zero gate voltage drain current − IDSS Gate threshold voltage VGS (th) −1.0 − Static drain-source on-state − RDS (on)∗ resistance − Yfs ∗ 0.2 Forward transfer admittance − Ciss Input capacitance − Output capacitance Coss Reverse transfer ca...