SE5470

www.DataSheet4U.com SE3470/5470 AlGaAs Infrared Emitting Diode FEATURES TO-46 metal can package Choice of flat window or lensed package 90¡ or 20¡ (nominal) beam angle option 880 nm wavelength Higher output power than GaAs at equivalent drive currents Wide operating temperature range (- 55¡C to +125¡C) Ideal for high pulsed current applications Mechanically and spectrally matched to SD3421/5421 photodiode, SD3443/5443/5491phototransistor, SD3410/5410 photodarlington and SD5600 series Schmitt trigger DESCRIPTION The SE3470/5470 series consists of aluminum gallium arsenide infrared emitting diode mounted in a TO-46 metal can package. The SE3470 series has flat window cans providing a wide beam angle, while the SE5470 series has glass lensed cans providing a narrow beam angle. These devices typically exhibit 70% greater power output than gallium arsenide devices at the same forward current. The TO-46 packages offer high power dissipation capability and are ideally suited for operation in hostile environments. INFRA-83.TIF OUTLINE DIMENSIONS in inches (mm) Tolerance 3 plc decimals ±0.005(0.12) 2 plc decimals ±0.020(0.51) SE3470 .188 (4.77) DIA. .178 (4.52) .219 (5.56) DIA. .208 (5.28) .500 (12.70) MIN. 1 45° .046(1.17) .036(.91) .100(2.54)DIA NOM .048(1.22) .160 (4.06) DIA. .137 (3.48) .015 (0.36) .153 (3.89) .140 (3.56) .028(.71) .018 (.460) 2 DIA. LEADS: 1. CATHODE (TAB) 2. ANODE (CASE) DIM_005a.ds4 SE5470 .188 (4.77) DIA. .178 (4.52) .219 (5.56) DIA. ...