STD5NE10

www.DataSheet4U.com ® STD5NE10 N - CHANNEL 100V - 0.32 Ω - 5A TO-251/TO-252 STripFET™ POWER MOSFET TYPE STD5NE10 s s s s s V DSS 100 V R DS(o n) < 0.4 Ω ID 5 A s TYPICAL RDS(on) = 0.32 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE TESTED 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL IPAK TO-251 (Suffix ”-1”) 3 2 1 1 3 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s MOTOR CONTROL (DISK DRIVES, etc.) s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION DPAK TO-252 (Suffix ”T4”) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V DS V DGR VGS ID ID I DM ( ) P tot dv/dt( 1 ) T st g Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 oC Derating F actor Peak Diode Recovery voltage slope Storage T emperature Max. Operating Junction Temperature o o Value 100 100 ± 20 5 3.5 20 25 0.17 0.6 -65 to 175 175 ( 1) ISD ≤ 5A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Unit V V V A A A W W /o C V/ns o o C C () Pulse width limited b...